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Current transport in ramp-type junctions with engineered interface

  • J. K. Heinsohn
  • , R. Dittmann
  • , J. Rodríguez Contreras
  • , J. Scherbel
  • , A. Klushin
  • , M. Siegel
  • , C. L. Jia
  • , S. Golubov
  • , M. Yu Kupryanov

科研成果: 期刊稿件文章同行评审

10 引用 (Scopus)

摘要

The transport properties of "interface-engineered" edge-type YBa2Cu3O7 Josephson junctions are investigated in detail. We have investigated the dependence of the current-voltage characteristics on external magnetic field, temperature, and microwave irradiation and compare them to the resistively shunted junction model. The temperature dependence of the critical current and the normal resistance allows us to draw conclusions to the transport of quasiparticles and Cooper pairs in the investigated "interface-engineered" junctions. We have studied the properties of junctions for which La doped YBa2Cu3O7 is used for the superconducting electrodes. We will propose a model for the undoped and the La doped case which takes into account a barrier which consists of a series connection of a normal conducting layer and an insulator, containing superconducting microconstrictions.

源语言英语
页(从-至)3852-3860
页数9
期刊Journal of Applied Physics
89
7
DOI
出版状态已出版 - 1 4月 2001
已对外发布

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