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CsCu5Se3: A Copper-Rich Ternary Chalcogenide Semiconductor with Nearly Direct Band Gap for Photovoltaic Application

  • Zhiguo Xia
  • , Huajing Fang
  • , Xiuwen Zhang
  • , Maxim S. Molokeev
  • , Romain Gautier
  • , Qingfeng Yan
  • , Su Huai Wei
  • , Kenneth R. Poeppelmeier
  • University of Science and Technology Beijing
  • Tsinghua University
  • Shenzhen University
  • Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
  • Far Eastern State Transport University
  • Siberian Federal University
  • Nantes Université
  • China Academy of Engineering Physics
  • Northwestern University

科研成果: 期刊稿件文章同行评审

40 引用 (Scopus)

摘要

Discovery of new semiconductor candidates with suitable band gaps is a challenge for optoelectronic application. A facile solvothermal synthesis of a new ternary chalcogenide semiconductor CsCu5Se3 is reported. The telluride CsCu5Te3 is also predicted to be stable. CsCu5Se3 is isostructural with CsCu5S3 (space group Pmma). The band gap calculations of these chalcogenide semiconductors using hybrid density functional theory indicate nearly direct band gaps, and their values (about 1.4 eV) were confirmed by the optical absorption spectroscopy. These alkali metal copper chalcogenides are interesting examples of copper-rich structures which are commonly associated with favorable photovoltaic application.

源语言英语
页(从-至)1121-1126
页数6
期刊Chemistry of Materials
30
3
DOI
出版状态已出版 - 13 2月 2018
已对外发布

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