Crystalline phases, microstructures and electrical properties of hafnium oxide films deposited by sol-gel method

Zhan Jie Wang; Toshihide Kumagai; Hiroyuki Kokawa; Jiunnjye Tsuaur; Masaaki Ichiki; Ryutaro Maeda

doi:10.1016/j.jcrysgro.2005.04.036

Crystalline phases, microstructures and electrical properties of hafnium oxide films deposited by sol-gel method

Zhan Jie Wang
, Toshihide Kumagai
, Hiroyuki Kokawa
, Jiunnjye Tsuaur
, Masaaki Ichiki
, Ryutaro Maeda

Tohoku University
National Institute of Advanced Industrial Science and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

28 引用（Scopus）

摘要

Hafnium oxide (HfO₂) films were grown on SiO₂/Si and Pt/Ti/SiO₂/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. XRD analysis indicated that the monoclinic HfO₂ films can be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO₂ films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO₂ films was approximately 1.14×10^-5 A/cm² at an applied electric field of 100 kV/cm.

源语言	英语
页（从-至）	452-457
页数	6
期刊	Journal of Crystal Growth
卷	281
期	2-4
DOI	https://doi.org/10.1016/j.jcrysgro.2005.04.036
出版状态	已出版 - 1 8月 2005
已对外发布	是

访问文件

10.1016/j.jcrysgro.2005.04.036

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{8cf53373f9794d4a8863717a60551a95,

title = "Crystalline phases, microstructures and electrical properties of hafnium oxide films deposited by sol-gel method",

abstract = "Hafnium oxide (HfO2) films were grown on SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. XRD analysis indicated that the monoclinic HfO2 films can be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14{\texttimes}10-5 A/cm2 at an applied electric field of 100 kV/cm.",

keywords = "A1. Crystal structure, A1. X-ray diffraction, B1. Oxides, B2. Dielectric materials",

author = "Wang, \{Zhan Jie\} and Toshihide Kumagai and Hiroyuki Kokawa and Jiunnjye Tsuaur and Masaaki Ichiki and Ryutaro Maeda",

year = "2005",

month = aug,

day = "1",

doi = "10.1016/j.jcrysgro.2005.04.036",

language = "英语",

volume = "281",

pages = "452--457",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2-4",

}

TY - JOUR

T1 - Crystalline phases, microstructures and electrical properties of hafnium oxide films deposited by sol-gel method

AU - Wang, Zhan Jie

AU - Kumagai, Toshihide

AU - Kokawa, Hiroyuki

AU - Tsuaur, Jiunnjye

AU - Ichiki, Masaaki

AU - Maeda, Ryutaro

PY - 2005/8/1

Y1 - 2005/8/1

N2 - Hafnium oxide (HfO2) films were grown on SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. XRD analysis indicated that the monoclinic HfO2 films can be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14×10-5 A/cm2 at an applied electric field of 100 kV/cm.

AB - Hafnium oxide (HfO2) films were grown on SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. XRD analysis indicated that the monoclinic HfO2 films can be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14×10-5 A/cm2 at an applied electric field of 100 kV/cm.

KW - A1. Crystal structure

KW - A1. X-ray diffraction

KW - B1. Oxides

KW - B2. Dielectric materials

UR - https://www.scopus.com/pages/publications/22144476901

U2 - 10.1016/j.jcrysgro.2005.04.036

DO - 10.1016/j.jcrysgro.2005.04.036

M3 - 文章

AN - SCOPUS:22144476901

SN - 0022-0248

VL - 281

SP - 452

EP - 457

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-4

ER -

Crystalline phases, microstructures and electrical properties of hafnium oxide films deposited by sol-gel method

摘要

访问文件

其它文件与链接

学术指纹

引用此