Corrigendum to “Electronic and optical properties of Zn-doped InGaAs emission layer with vacancy defects: A DFT study” [Optik 143 (2017) 135–141](S0030402617307258)(10.1016/j.ijleo.2017.06.056)

Jing Guo; Minhua Zhou; Jing Zhao; Lei Zhou; Liansong Xiong

doi:10.1016/j.ijleo.2018.06.149

Corrigendum to “Electronic and optical properties of Zn-doped InGaAs emission layer with vacancy defects: A DFT study” [Optik 143 (2017) 135–141](S0030402617307258)(10.1016/j.ijleo.2017.06.056)

Jing Guo
, Minhua Zhou
, Jing Zhao
, Lei Zhou
, Liansong Xiong

科研成果: 期刊稿件 › 评论/辩论

摘要

Acknowledgment The authors acknowledge National Supercomputing Center in Shenzhen for providing the computational resources. The authors would like to apologies for any inconvenience caused.

源语言	英语
页（从-至）	1196
页数	1
期刊	Optik
卷	179
DOI	https://doi.org/10.1016/j.ijleo.2018.06.149
出版状态	已出版 - 2月 2019
已对外发布	是

访问文件

10.1016/j.ijleo.2018.06.149

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{6d02824c51dd456391678939c5ab099e,

title = "Corrigendum to “Electronic and optical properties of Zn-doped InGaAs emission layer with vacancy defects: A DFT study” [Optik 143 (2017) 135–141](S0030402617307258)(10.1016/j.ijleo.2017.06.056)",

abstract = "Acknowledgment The authors acknowledge National Supercomputing Center in Shenzhen for providing the computational resources. The authors would like to apologies for any inconvenience caused.",

author = "Jing Guo and Minhua Zhou and Jing Zhao and Lei Zhou and Liansong Xiong",

note = "Publisher Copyright: {\textcopyright} 2018",

year = "2019",

month = feb,

doi = "10.1016/j.ijleo.2018.06.149",

language = "英语",

volume = "179",

pages = "1196",

journal = "Optik",

issn = "0030-4026",

publisher = "Elsevier GmbH",

}

TY - JOUR

T1 - Corrigendum to “Electronic and optical properties of Zn-doped InGaAs emission layer with vacancy defects

T2 - A DFT study” [Optik 143 (2017) 135–141](S0030402617307258)(10.1016/j.ijleo.2017.06.056)

AU - Guo, Jing

AU - Zhou, Minhua

AU - Zhao, Jing

AU - Zhou, Lei

AU - Xiong, Liansong

PY - 2019/2

Y1 - 2019/2

N2 - Acknowledgment The authors acknowledge National Supercomputing Center in Shenzhen for providing the computational resources. The authors would like to apologies for any inconvenience caused.

AB - Acknowledgment The authors acknowledge National Supercomputing Center in Shenzhen for providing the computational resources. The authors would like to apologies for any inconvenience caused.

UR - https://www.scopus.com/pages/publications/85049910288

U2 - 10.1016/j.ijleo.2018.06.149

DO - 10.1016/j.ijleo.2018.06.149

M3 - 评论/辩论

AN - SCOPUS:85049910288

SN - 0030-4026

VL - 179

SP - 1196

JO - Optik

JF - Optik

ER -

Corrigendum to “Electronic and optical properties of Zn-doped InGaAs emission layer with vacancy defects: A DFT study” [Optik 143 (2017) 135–141](S0030402617307258)(10.1016/j.ijleo.2017.06.056)

摘要

访问文件

其它文件与链接

学术指纹

引用此