TY - JOUR
T1 - Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications
AU - Qi, Jinwei
AU - Yang, Xu
AU - Li, Xin
AU - Chen, Wenjie
AU - Long, Teng
AU - Tian, Kai
AU - Hou, Xiaodong
AU - Wang, Xuhui
N1 - Publisher Copyright:
© 1986-2012 IEEE.
PY - 2021/6
Y1 - 2021/6
N2 - The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe operation of the power conversion systems, particularly under the extreme temperature conditions. In this article, the avalanche capability of SiC planar/trench MOSFETs is systematically evaluated and analyzed over the temperature range of 90 to 340 K. Importantly, the essential mechanisms and temperature dependence of avalanche failure under cryogenic conditions are further explored by combining many analysis methods such as TCAD simulations, the unclamped inductive switching characterizations, and the transient junction temperature prediction. The highest avalanche energy density of 171.24 mJ/mm2 at 90K indicates the great application potential of SiC planner mosfet in cryogenic electronics. Moreover, the safe avalanche operation boundary (AOB) model is established over the cryogenic temperature range. The relevant analysis method and AOB model can be used to accurately evaluate and quantitatively predict the avalanche capability of SiC planar/trench mosfets for the cryogenic converter design.
AB - The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe operation of the power conversion systems, particularly under the extreme temperature conditions. In this article, the avalanche capability of SiC planar/trench MOSFETs is systematically evaluated and analyzed over the temperature range of 90 to 340 K. Importantly, the essential mechanisms and temperature dependence of avalanche failure under cryogenic conditions are further explored by combining many analysis methods such as TCAD simulations, the unclamped inductive switching characterizations, and the transient junction temperature prediction. The highest avalanche energy density of 171.24 mJ/mm2 at 90K indicates the great application potential of SiC planner mosfet in cryogenic electronics. Moreover, the safe avalanche operation boundary (AOB) model is established over the cryogenic temperature range. The relevant analysis method and AOB model can be used to accurately evaluate and quantitatively predict the avalanche capability of SiC planar/trench mosfets for the cryogenic converter design.
KW - 1.2 kV SiC planar MOSFET
KW - 1.2 kV SiC trench MOSFET
KW - Unclamped inductive switching (UIS)
KW - avalanche capability
KW - cryogenic temperature
UR - https://www.scopus.com/pages/publications/85100724176
U2 - 10.1109/TPEL.2020.3034902
DO - 10.1109/TPEL.2020.3034902
M3 - 文章
AN - SCOPUS:85100724176
SN - 0885-8993
VL - 36
SP - 6954
EP - 6966
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 6
M1 - 9246306
ER -