Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices

Ru Zhang; Wenjie Chen; Yu Xuan Chen; Yue Cao; Ruitao Yan; Xu Yang

doi:10.1109/WiPDAAsia51810.2021.9656069

Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices

Ru Zhang
, Wenjie Chen
, Yu Xuan Chen
, Yue Cao
, Ruitao Yan
, Xu Yang

电气工程学院

Xi'an Jiaotong University

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What's more, a parameter n is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger n is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis.

源语言	英语
主期刊名	IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
出版商	Institute of Electrical and Electronics Engineers Inc.
页	123-126
页数	4
ISBN（电子版）	9781665418515
DOI	https://doi.org/10.1109/WiPDAAsia51810.2021.9656069
出版状态	已出版 - 2021
活动	2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 - Wuhan, 中国期限: 25 8月 2021 → 27 8月 2021

出版系列

姓名	IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

会议

会议	2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
国家/地区	中国
市	Wuhan
时期	25/08/21 → 27/08/21

访问文件

10.1109/WiPDAAsia51810.2021.9656069

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链接到 Scopus 的出版物

引用此

Zhang, R., Chen, W., Chen, Y. X., Cao, Y., Yan, R., & Yang, X. (2021). Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. 在 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 (页码 123-126). (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia51810.2021.9656069

Zhang, Ru ; Chen, Wenjie ; Chen, Yu Xuan 等. / Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 页码 123-126 (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021).

@inproceedings{09186d4b010c4d9ab038bcc1ed2ba7d9,

title = "Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices",

abstract = "Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What's more, a parameter n is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger n is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis.",

keywords = "Electromagnetic interference (EMI), gallium nitride (GaN), reverse conduction, silicon carbide (SiC)",

author = "Ru Zhang and Wenjie Chen and Chen, \{Yu Xuan\} and Yue Cao and Ruitao Yan and Xu Yang",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 ; Conference date: 25-08-2021 Through 27-08-2021",

year = "2021",

doi = "10.1109/WiPDAAsia51810.2021.9656069",

language = "英语",

series = "IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "123--126",

booktitle = "IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021",

}

Zhang, R, Chen, W, Chen, YX, Cao, Y, Yan, R & Yang, X 2021, Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. 在 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021, Institute of Electrical and Electronics Engineers Inc., 页码 123-126, 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021, Wuhan, 中国, 25/08/21. https://doi.org/10.1109/WiPDAAsia51810.2021.9656069

Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. / Zhang, Ru; Chen, Wenjie; Chen, Yu Xuan 等.
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 页码 123-126 (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices

AU - Zhang, Ru

AU - Chen, Wenjie

AU - Chen, Yu Xuan

AU - Cao, Yue

AU - Yan, Ruitao

AU - Yang, Xu

PY - 2021

Y1 - 2021

N2 - Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What's more, a parameter n is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger n is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis.

AB - Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What's more, a parameter n is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger n is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis.

KW - Electromagnetic interference (EMI)

KW - gallium nitride (GaN)

KW - reverse conduction

KW - silicon carbide (SiC)

UR - https://www.scopus.com/pages/publications/85124798183

U2 - 10.1109/WiPDAAsia51810.2021.9656069

DO - 10.1109/WiPDAAsia51810.2021.9656069

M3 - 会议稿件

AN - SCOPUS:85124798183

T3 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

SP - 123

EP - 126

BT - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

Y2 - 25 August 2021 through 27 August 2021

ER -

Zhang R, Chen W, Chen YX, Cao Y, Yan R, Yang X. Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. 在 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 页码 123-126. (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021). doi: 10.1109/WiPDAAsia51810.2021.9656069

Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices

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