摘要
In this study, we employ transmission electron microscope (TEM) to analyze radiation defects in helium (He) and krypton (Kr) ions implanted bulk and thin-foil tungsten. For bulk tungsten, subgrains are formed near the surface region under both He+ and Kr+ irradiation. Dislocation loops are observed beyond ion implanted range. These observations are related to self-interstitial atoms (SIAs) diffusion and clustering. Ordered bubbles are formed in He+ implantation, while no cavities are detected in Kr+ irradiation. In thin-foil tungsten, line up of dislocation loops is found mainly aligns along {101} and {112} slip planes. Both 1/2<111> and 〈100〉 dislocation loops are identified. Compared to He+ irradiation, more 〈100〉 loops are detected in Kr+ irradiation due to higher energy collision cascade. Nanocavities are detected in irradiated thin-foil tungsten besides the formation of high density of interstitial loops. The number density of dislocation loops and the volume fractions of cavities are higher in He+ irradiation than in Kr+ irradiation. The differences in nature of radiation defects is attributed to the higher recombination rate of vacancies and interstitials in bulk sample, the significant surface sink effect in thin-foil irradiation and the chemical and physical effect of implanted ions.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 162-171 |
| 页数 | 10 |
| 期刊 | Acta Materialia |
| 卷 | 186 |
| DOI | |
| 出版状态 | 已出版 - 3月 2020 |
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