Compact IGCT Circuit Model Under High Current Transition Using Gradient-Based Parameters Estimation

Integrated Gate-Commutated Thyristors (IGCTs) are high-capacity power electronic devices known for their low conduction loss and large current-handling capability, widely used in DC converters and circuit breakers. While the hightransient surge currents in high-capacity systems pose critical failure risks to IGCTs. This paper firstly proposes a compact circuit model for IGCTs under abnormal working conditions, specifically reverse voltage scenarios, that targets high-transient current applications. Then, to determine the model parameters, a parameter estimation approach is proposed combining a simple multi-layer perceptron (MLP) neural network and a gradientbased optimization method. This research thereby establishes a robust and precise modeling and optimization framework for IGCTs in high-capacity systems, paving the way to the reliable operation of power systems.