Characterization of ZnO films grown on different substrates by L-MBE method

Xiaodong Yang; Jingwen Zhang; Qing'an Xu; Yongning He; Hongbo Wang; Weifeng Zhang; Xun Hou

doi:10.1117/12.608013

Characterization of ZnO films grown on different substrates by L-MBE method

Xiaodong Yang
, Jingwen Zhang
, Qing'an Xu
, Yongning He
, Hongbo Wang
, Weifeng Zhang
, Xun Hou

电子与信息学部

Xi'an Jiaotong University
CAS - Xi'an Institute of Optics and Precision Mechanics
University of Chinese Academy of Sciences
Henan University

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al₂O ₃. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al ₂O₃ and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).

源语言	英语
期刊论文编号	85
页（从-至）	369-372
页数	4
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	5774
DOI	https://doi.org/10.1117/12.608013
出版状态	已出版 - 2005
活动	Fifth International Conference on Thin Film Physics and Applications - Shanghai, 中国期限: 31 5月 2004 → 2 6月 2004

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title = "Characterization of ZnO films grown on different substrates by L-MBE method",

abstract = "ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O 3. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al 2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).",

keywords = "Atomic force microscopy, Laser molecular beam epitaxy, Photoluminescence, ZnO",

author = "Xiaodong Yang and Jingwen Zhang and Qing'an Xu and Yongning He and Hongbo Wang and Weifeng Zhang and Xun Hou",

year = "2005",

doi = "10.1117/12.608013",

language = "英语",

volume = "5774",

pages = "369--372",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

}

TY - JOUR

T1 - Characterization of ZnO films grown on different substrates by L-MBE method

AU - Yang, Xiaodong

AU - Zhang, Jingwen

AU - Xu, Qing'an

AU - He, Yongning

AU - Wang, Hongbo

AU - Zhang, Weifeng

AU - Hou, Xun

PY - 2005

Y1 - 2005

N2 - ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O 3. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al 2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).

AB - ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O 3. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al 2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).

KW - Atomic force microscopy

KW - Laser molecular beam epitaxy

KW - Photoluminescence

KW - ZnO

UR - https://www.scopus.com/pages/publications/25644455341

U2 - 10.1117/12.608013

DO - 10.1117/12.608013

M3 - 会议文章

AN - SCOPUS:25644455341

SN - 0277-786X

VL - 5774

SP - 369

EP - 372

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 85

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Characterization of ZnO films grown on different substrates by L-MBE method

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