Characterization of single crystal diamond damaged layer induced by ion implantation and restored by varying annealing conditions

Fabrication of single crystal diamond (SCD) micro-structure remains a challenge due to its unique chemical and mechanical stability. Fortunately, the stable diamond sp³ bonds can be changed by using ion implantation technology. Ion implantation induced defects present a gaussian-like distribution in the vertical area. The high-damaged area can be etched by chemical treatments, while the low-damaged area which is usually difficult to eliminate could degrade the performance of diamond devices. In this study, fabrication of SCD three-dimensional micro-structure on HPHT diamond substrate by using ion implantation and lift-off techniques has been carried out. A thermal annealing step is employed to remove residual damage induced by ion implantation process. Raman and photoluminescence spectroscopies are used to characterize the top side and back side of low-damaged layer induced by ion implantation and restored by varying thermal annealing conditions.