Characterization of intrinsic donor defects in ZnO ceramics by dielectric spectroscopy

With the existence of depletion layer, the intrinsic donor defect structure of ZnO ceramics has been investigated by broadband dielectric spectroscopy in a wide temperature range. Two loss peaks originating from electronic relaxation of oxygen vacancy and zinc interstitial, respectively, are observed in ZnO ceramics simultaneously, implying the coexistence of these two intrinsic defects. The corresponding activation energy for electronic relaxation of zinc interstitial and oxygen vacancy are 0.26 and 0.36 eV, respectively, which is consistent with other reports