Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition

J. Schubert; O. Trithaveesak; W. Zander; M. Roeckerath; T. Heeg; H. Y. Chen; C. L. Jia; P. Meuffels; Y. Jia; D. G. Schlom

doi:10.1007/s00339-007-4327-8

Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition

J. Schubert
, O. Trithaveesak
, W. Zander
, M. Roeckerath
, T. Heeg
, H. Y. Chen
, C. L. Jia
, P. Meuffels
, Y. Jia
, D. G. Schlom

Jülich Research Centre
Pennsylvania State University

科研成果: 期刊稿件 › 文章 › 同行评审

27 引用（Scopus）

摘要

Epitaxial thin films of LaLuO₃ were deposited on SrTiO ₃(100) and SrRuO₃/SrTiO₃(100) or SrRuO ₃/LaAlO₃(100) substrates using pulsed-laser deposition. They were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and atomic force microscopy. Smooth, c-axis oriented films with a channeling minimum yield of 3% were obtained. The electrical characterization of Au/LaLuO₃/SrRuO ₃/SrTiO₃(100) and Au/LaLuO₃/SrRuO ₃/LaAlO₃(100) metal-insulator-metal capacitor stacks revealed a dielectric constant of κ>45 and a breakdown field of 2 MV/cm for 100 nm thick epitaxial LaLuO₃ films.

源语言	英语
页（从-至）	577-579
页数	3
期刊	Applied Physics A: Materials Science and Processing
卷	90
期	3
DOI	https://doi.org/10.1007/s00339-007-4327-8
出版状态	已出版 - 3月 2008
已对外发布	是

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title = "Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition",

abstract = "Epitaxial thin films of LaLuO3 were deposited on SrTiO 3(100) and SrRuO3/SrTiO3(100) or SrRuO 3/LaAlO3(100) substrates using pulsed-laser deposition. They were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and atomic force microscopy. Smooth, c-axis oriented films with a channeling minimum yield of 3\% were obtained. The electrical characterization of Au/LaLuO3/SrRuO 3/SrTiO3(100) and Au/LaLuO3/SrRuO 3/LaAlO3(100) metal-insulator-metal capacitor stacks revealed a dielectric constant of κ>45 and a breakdown field of 2 MV/cm for 100 nm thick epitaxial LaLuO3 films.",

author = "J. Schubert and O. Trithaveesak and W. Zander and M. Roeckerath and T. Heeg and Chen, \{H. Y.\} and Jia, \{C. L.\} and P. Meuffels and Y. Jia and Schlom, \{D. G.\}",

year = "2008",

month = mar,

doi = "10.1007/s00339-007-4327-8",

language = "英语",

volume = "90",

pages = "577--579",

journal = "Applied Physics A: Materials Science and Processing",

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TY - JOUR

T1 - Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition

AU - Schubert, J.

AU - Trithaveesak, O.

AU - Zander, W.

AU - Roeckerath, M.

AU - Heeg, T.

AU - Chen, H. Y.

AU - Jia, C. L.

AU - Meuffels, P.

AU - Jia, Y.

AU - Schlom, D. G.

PY - 2008/3

Y1 - 2008/3

N2 - Epitaxial thin films of LaLuO3 were deposited on SrTiO 3(100) and SrRuO3/SrTiO3(100) or SrRuO 3/LaAlO3(100) substrates using pulsed-laser deposition. They were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and atomic force microscopy. Smooth, c-axis oriented films with a channeling minimum yield of 3% were obtained. The electrical characterization of Au/LaLuO3/SrRuO 3/SrTiO3(100) and Au/LaLuO3/SrRuO 3/LaAlO3(100) metal-insulator-metal capacitor stacks revealed a dielectric constant of κ>45 and a breakdown field of 2 MV/cm for 100 nm thick epitaxial LaLuO3 films.

AB - Epitaxial thin films of LaLuO3 were deposited on SrTiO 3(100) and SrRuO3/SrTiO3(100) or SrRuO 3/LaAlO3(100) substrates using pulsed-laser deposition. They were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and atomic force microscopy. Smooth, c-axis oriented films with a channeling minimum yield of 3% were obtained. The electrical characterization of Au/LaLuO3/SrRuO 3/SrTiO3(100) and Au/LaLuO3/SrRuO 3/LaAlO3(100) metal-insulator-metal capacitor stacks revealed a dielectric constant of κ>45 and a breakdown field of 2 MV/cm for 100 nm thick epitaxial LaLuO3 films.

UR - https://www.scopus.com/pages/publications/37549044714

U2 - 10.1007/s00339-007-4327-8

DO - 10.1007/s00339-007-4327-8

M3 - 文章

AN - SCOPUS:37549044714

SN - 0947-8396

VL - 90

SP - 577

EP - 579

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition

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