@inproceedings{152ce0194c8847a5b9006e00490156da,
title = "Characteristics of SiC MOSFET in a Wide Temperature Range",
abstract = "In order to expand the application of SiC MOSFET in a wide temperature range, the performance of SiC MOSFET from 25°C to 425°C is studied in this paper by taking the 1.2 kV QPM3-1200-0013D as an example. Different from the device characteristics given in the data sheet or previous articles at only three discrete temperatures or temperatures below 250°C, the temperature-dependent static characteristics of SiC MOS-FET are remeasured and nonlinearly characterized in a wide temperature range in this paper. In addition, considering the improvement effect of SiC Schottky barrier diode on reliability of SiC MOSFET's body diode, the temperature-dependent static characteristics of SiC Schottky barrier diode are also analyzed in this paper, which provides guidance for the high-temperature pre-design and application of SiC MOSFET.",
keywords = "SiC MOSFET, SiC SBD, high temperature",
author = "Mengyu Zhu and Laili Wang and Huaqing Li and Chengzi Yang and Dingkun Ma and Fengtao Yang",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 ; Conference date: 25-08-2021 Through 27-08-2021",
year = "2021",
doi = "10.1109/WiPDAAsia51810.2021.9656056",
language = "英语",
series = "IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "79--82",
booktitle = "IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021",
}