Bipolar resistive switching memory behaviors of the micro-size composite particles

Composite particles (CPs) with an average diameter of 100 μm, containing the amorphous silicates, but crystal structures are dominated by the NaS₂, Al₂S₃, Al_0.55Mo₂S₄ and MoO₃, are synthesized using hydrothermal method. Bipolar resistive switching (RS) memory behaviors with favorable resistance ON/OFF ratio, high retention and voltage cycling endurance performance are observed in the CPs-based device. The RS memory behaviors can be well controlled by stressing visible light at room temperature. The traps/deep traps based physical modes are proposed to interpret the RS memory behaviors for the quasi-bulk silicate-based composites. Different from conventional nano-scale RS memory device, the discovery of the RS memory behavior of micro-scale silicate composites may provide one new insight into the mechanism of resistive switching behavior.