摘要
The generation of high quality bipolar random signal for unconventional computing and artificial neural networks remains challenging. In this study, we proposed a new method to generate bipolar random signals using two industrial-viable magnetic tunnel junctions (MTJs) operated solely by electrical operations compatible to the conventional memory program/read circuits. The bipolar random signals demonstrate excellent randomness and this method shows satisfying controllability over the average dwell times (ADTs), with good adjustability in bit generation speed and power consumption. This study provides a new practical hardware solution to the generation of high-quality random signals in the post-Moore era.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 171-174 |
| 页数 | 4 |
| 期刊 | IEEE Electron Device Letters |
| 卷 | 46 |
| 期 | 2 |
| DOI | |
| 出版状态 | 已出版 - 2025 |
学术指纹
探究 'Bipolar Random Signal Generation With Electrical Operation Based on Two Magnetic Tunnel Junctions' 的科研主题。它们共同构成独一无二的指纹。引用此
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