(Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor

S. Regnery; P. Ehrhart; F. Fitsilis; R. Waser; Y. Ding; C. L. Jia; M. Schumacher; F. Schienle; H. Juergensen

doi:10.1016/S0955-2219(03)00235-8

(Ba,Sr)TiO₃ thin film growth in a batch processing MOCVD reactor

S. Regnery
, P. Ehrhart
, F. Fitsilis
, R. Waser
, Y. Ding
, C. L. Jia
, M. Schumacher
, F. Schienle
, H. Juergensen

Jülich Research Centre
Aixtron SE

科研成果: 期刊稿件 › 文章 › 同行评审

19 引用（Scopus）

摘要

Thin films of different compositions within the (Ba_x, Sr_1-x)TiO₃ solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd)₂, Ba(thd)₂ and Ti(O-i-Pr)₂(thd)₂ precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO₃ films. Finally, the growth of SrTiO₃ on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed.

源语言	英语
页（从-至）	271-276
页数	6
期刊	Journal of the European Ceramic Society
卷	24
期	2
DOI	https://doi.org/10.1016/S0955-2219(03)00235-8
出版状态	已出版 - 2月 2004
已对外发布	是

访问文件

10.1016/S0955-2219(03)00235-8

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{40b4023abd87466ca91e4138efdcdd6a,

title = "(Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor",

abstract = "Thin films of different compositions within the (Bax, Sr1-x)TiO3 solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd)2, Ba(thd)2 and Ti(O-i-Pr)2(thd)2 precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO3 films. Finally, the growth of SrTiO3 on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed.",

keywords = "BaTiO and titanates, Capacitors, Dielectric properties, Electron microscopy, Thin films",

author = "S. Regnery and P. Ehrhart and F. Fitsilis and R. Waser and Y. Ding and Jia, \{C. L.\} and M. Schumacher and F. Schienle and H. Juergensen",

year = "2004",

month = feb,

doi = "10.1016/S0955-2219(03)00235-8",

language = "英语",

volume = "24",

pages = "271--276",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - (Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor

AU - Regnery, S.

AU - Ehrhart, P.

AU - Fitsilis, F.

AU - Waser, R.

AU - Ding, Y.

AU - Jia, C. L.

AU - Schumacher, M.

AU - Schienle, F.

AU - Juergensen, H.

PY - 2004/2

Y1 - 2004/2

N2 - Thin films of different compositions within the (Bax, Sr1-x)TiO3 solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd)2, Ba(thd)2 and Ti(O-i-Pr)2(thd)2 precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO3 films. Finally, the growth of SrTiO3 on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed.

AB - Thin films of different compositions within the (Bax, Sr1-x)TiO3 solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd)2, Ba(thd)2 and Ti(O-i-Pr)2(thd)2 precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO3 films. Finally, the growth of SrTiO3 on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed.

KW - BaTiO and titanates

KW - Capacitors

KW - Dielectric properties

KW - Electron microscopy

KW - Thin films

UR - https://www.scopus.com/pages/publications/0346724196

U2 - 10.1016/S0955-2219(03)00235-8

DO - 10.1016/S0955-2219(03)00235-8

M3 - 文章

AN - SCOPUS:0346724196

SN - 0955-2219

VL - 24

SP - 271

EP - 276

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 2

ER -

(Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor

摘要

访问文件

其它文件与链接

学术指纹

引用此

(Ba,Sr)TiO₃ thin film growth in a batch processing MOCVD reactor