TY - JOUR
T1 - Barrier heights of metals on OH-diamond surface determined by X-ray photoelectron spectroscopy
AU - Li, F. N.
AU - Fu, J.
AU - Wang, H. X.
N1 - Publisher Copyright:
© 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.
PY - 2026/1
Y1 - 2026/1
N2 - This study systematically investigates the interfacial electronic properties of metal contacts on hydroxyl-terminated diamond (OH-diamond) using X-ray photoelectron spectroscopy (XPS). OH-diamond surfaces were prepared via high-voltage hydroxide ion treatment in deionized water, followed by deposition of Cu, Mo, and Ru ultrathin films (3 nm) to form metal/OH-diamond contacts. The barrier heights (ΦBH) were quantified through high-resolution XPS analysis, revealing low barrier heights of 0.44 ± 0.12 eV (Cu/OH-diamond), 0.20 ± 0.12 eV (Mo/OH-diamond), and 0.48 ± 0.12 eV (Ru/OH-diamond). Comparative studies of metals on O-terminated diamond (O-diamond) and graphite interfaces were carried out. Metal/O-diamond interfaces exhibited higher barriers (0.89–1.70 eV) consistent with literature reports for Schottky contacts, while metal/graphite structures with ohmic behavior presented low barrier heights in a range from 0.33 to 0.40 eV. Notably, OH-diamond surfaces exhibited negative electron affinity (−0.67 to −0.28 eV), akin to hydrogen-terminated diamond but with improved thermal stability. These findings establish OH-diamond as a promising platform for diamond-based electronic devices, combining the advantages of low contact resistance with superior interfacial stability.
AB - This study systematically investigates the interfacial electronic properties of metal contacts on hydroxyl-terminated diamond (OH-diamond) using X-ray photoelectron spectroscopy (XPS). OH-diamond surfaces were prepared via high-voltage hydroxide ion treatment in deionized water, followed by deposition of Cu, Mo, and Ru ultrathin films (3 nm) to form metal/OH-diamond contacts. The barrier heights (ΦBH) were quantified through high-resolution XPS analysis, revealing low barrier heights of 0.44 ± 0.12 eV (Cu/OH-diamond), 0.20 ± 0.12 eV (Mo/OH-diamond), and 0.48 ± 0.12 eV (Ru/OH-diamond). Comparative studies of metals on O-terminated diamond (O-diamond) and graphite interfaces were carried out. Metal/O-diamond interfaces exhibited higher barriers (0.89–1.70 eV) consistent with literature reports for Schottky contacts, while metal/graphite structures with ohmic behavior presented low barrier heights in a range from 0.33 to 0.40 eV. Notably, OH-diamond surfaces exhibited negative electron affinity (−0.67 to −0.28 eV), akin to hydrogen-terminated diamond but with improved thermal stability. These findings establish OH-diamond as a promising platform for diamond-based electronic devices, combining the advantages of low contact resistance with superior interfacial stability.
KW - Barrier heights
KW - Diamond
KW - Hydroxyl termination
KW - Negative electron affinity
KW - Ohmic contacts
KW - XPS
UR - https://www.scopus.com/pages/publications/105030143359
U2 - 10.1016/j.diamond.2025.113162
DO - 10.1016/j.diamond.2025.113162
M3 - 文章
AN - SCOPUS:105030143359
SN - 0925-9635
VL - 161
JO - Diamond and Related Materials
JF - Diamond and Related Materials
M1 - 113162
ER -