TY - JOUR
T1 - Artificial synaptic plasticity and associative learning of the nanostructured MoS2/Cu2S heterojunction based memristor
AU - Yang, Yulong
AU - Sun, Bai
AU - Mao, Shuangsuo
AU - Qin, Jiajia
AU - Hou, Wentao
AU - Liu, Mingnan
AU - Rao, Zhaowei
AU - Lin, Wei
AU - Zhao, Yong
N1 - Publisher Copyright:
© 2026 Elsevier Ltd
PY - 2026/9
Y1 - 2026/9
N2 - Based on the isomorphism between memristor and biosynapse, memristor can be applied to simulate the artificial synaptic behavior, thus the memristor can achieve brain-like neuromorphic computing. In this work, MoS2 film was deposited on a Cu2S/Ti substrate to successfully fabricating an Ag/MoS2/Cu2S/Ti heterostructure based memristor. Further, it was found the current-voltage (I-V) curve of the device exhibits typical non-volatile resistance switching characteristics, and maintained stable cycling performance and high switching ratio. By analyzing the formation and rupture of Ag+ ions and sulfur vacancy conductive filaments, the charge transfer mechanism of the Ag/MoS2/Cu2S/Ti memristor was investigated. By applying specific pulse sequences to the device, various biosynaptic functions, such as short-term potentiation (PPF), long-term potentiation/depression (LTP/D), and spike-timing dependent plasticity (STDP), were successfully simulated. Finally, in the associative learning-Pavlov's dog experiment simulation, the device requires only a few training iterations to re-establish the conditioned response, demonstrating excellent learning capabilities.
AB - Based on the isomorphism between memristor and biosynapse, memristor can be applied to simulate the artificial synaptic behavior, thus the memristor can achieve brain-like neuromorphic computing. In this work, MoS2 film was deposited on a Cu2S/Ti substrate to successfully fabricating an Ag/MoS2/Cu2S/Ti heterostructure based memristor. Further, it was found the current-voltage (I-V) curve of the device exhibits typical non-volatile resistance switching characteristics, and maintained stable cycling performance and high switching ratio. By analyzing the formation and rupture of Ag+ ions and sulfur vacancy conductive filaments, the charge transfer mechanism of the Ag/MoS2/Cu2S/Ti memristor was investigated. By applying specific pulse sequences to the device, various biosynaptic functions, such as short-term potentiation (PPF), long-term potentiation/depression (LTP/D), and spike-timing dependent plasticity (STDP), were successfully simulated. Finally, in the associative learning-Pavlov's dog experiment simulation, the device requires only a few training iterations to re-establish the conditioned response, demonstrating excellent learning capabilities.
KW - Artificial intelligence
KW - Artificial synapse
KW - Memristor
KW - Neuromorphic computing
KW - Synaptic plasticity
UR - https://www.scopus.com/pages/publications/105037060978
U2 - 10.1016/j.materresbull.2026.114193
DO - 10.1016/j.materresbull.2026.114193
M3 - 文章
AN - SCOPUS:105037060978
SN - 0025-5408
VL - 202
JO - Materials Research Bulletin
JF - Materials Research Bulletin
M1 - 114193
ER -