Application of high resolution multiple-crystal multiple-reflection x-ray diffractometer in characterization of semiconductors

High resolution multiple-crystal multiple-reflection X-ray diffractometer has been used to record reciprocal space maps of semiconductors. Different mapping shapes correspond to different crystal quality. For GaAs/AlGaAs materials, macro curvature, micro tilt, gradient of composition, strain, relax and continuity parallel to interface have been shown qualitatively. The results can also fit for other semicondutor materials.