Application of BEM to high-voltage junction termination

Zilu Wu; Yumin Gao; Jinsheng Luo; Xun Hou; Guofu Chen

doi:10.1109/43.952738

Application of BEM to high-voltage junction termination

Zilu Wu
, Yumin Gao
, Jinsheng Luo
, Xun Hou
, Guofu Chen

CAS - Xi'an Institute of Optics and Precision Mechanics
Xi'an Jiaotong University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Ideas for using the boundary element method (BEM) with the concept of critical electric field for simulation of high-voltage junction termination are introduced. Approaches for dealing with interface charges, depleted regions, and metal field plates are presented. Rules used to develop and apply the BEM program are given. Simulation of one silicon-on-insulator diode is performed and the results are compared with those obtained using the finite difference method.

源语言	英语
页（从-至）	1218-1225
页数	8
期刊	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
卷	20
期	10
DOI	https://doi.org/10.1109/43.952738
出版状态	已出版 - 10月 2001
已对外发布	是

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KW - Critical electric field

KW - Junction termination

KW - SOI

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Application of BEM to high-voltage junction termination

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