Annealing and lateral migration of defects in IIa diamond created by near-threshold electron irradiation

Kaiyue Wang; John W. Steeds; Zhihong Li; Hongxing Wang

doi:10.1063/1.4980017

Annealing and lateral migration of defects in IIa diamond created by near-threshold electron irradiation

Kaiyue Wang
, John W. Steeds
, Zhihong Li
, Hongxing Wang

电子与信息学部

Taiyuan University of Science and Technology
University of Bristol
Tianjin University

科研成果: 期刊稿件 › 文章 › 同行评审

22 引用（Scopus）

摘要

The migration of vacancies in diamond is of considerable fundamental interest and has been widely studied previously, while the involvement of self-interstitials in diamond is less common except through centers such as 3H, 515.8 nm, 533.5 nm, and 580 nm. In this paper, the annealing and lateral migration of some interstitial-related centers in type IIa diamond are investigated by low temperature photoluminescence (PL) microscopy, and the distributions of interstitial- and vacancy-related centers are also clearly presented and discussed.

源语言	英语
文章编号	152101
期刊	Applied Physics Letters
卷	110
期	15
DOI	https://doi.org/10.1063/1.4980017
出版状态	已出版 - 10 4月 2017

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abstract = "The migration of vacancies in diamond is of considerable fundamental interest and has been widely studied previously, while the involvement of self-interstitials in diamond is less common except through centers such as 3H, 515.8 nm, 533.5 nm, and 580 nm. In this paper, the annealing and lateral migration of some interstitial-related centers in type IIa diamond are investigated by low temperature photoluminescence (PL) microscopy, and the distributions of interstitial- and vacancy-related centers are also clearly presented and discussed.",

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AB - The migration of vacancies in diamond is of considerable fundamental interest and has been widely studied previously, while the involvement of self-interstitials in diamond is less common except through centers such as 3H, 515.8 nm, 533.5 nm, and 580 nm. In this paper, the annealing and lateral migration of some interstitial-related centers in type IIa diamond are investigated by low temperature photoluminescence (PL) microscopy, and the distributions of interstitial- and vacancy-related centers are also clearly presented and discussed.

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Annealing and lateral migration of defects in IIa diamond created by near-threshold electron irradiation

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