An integrated solution for high turns ratio transformers suitable in 3D applications

The advent of the AI era has driven an increasing demand for high-efficiency, high-density power supplies with high-current output capabilities in data centers. High-frequency resonant converters are particularly attractive for industrial applications due to their high power density and efficiency. This paper presents an integrated planar transformer scheme based on GaN devices for a high-frequency LLC resonant converter, targeting high-voltage single-stage DC transformers (DCX). The integration is achieved by arranging fractional-turn transformers in a four-post matrix configuration. This approach maintains high efficiency while leveraging the matrix structure's inherent high power density. Simulation results demonstrate a peak efficiency of 98.2% under the following conditions: a switching frequency of 1 MHz, a voltage conversion ratio from 400 V to 4 V, and an output power level of 2000 W.