TY - GEN
T1 - An improved switching loss model for a 650V enhancement-mode GaN transistor
AU - Wang, Kangping
AU - Tian, Mofan
AU - Li, Hongchang
AU - Zhang, Feng
AU - Yang, Xu
AU - Wang, Laili
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016
Y1 - 2016
N2 - This paper proposes an improved switching loss model for a 650V enhancement-mode gallium nitride (GaN) transistor. The interpolation fitting method is used to fit the strong nonlinear capacitance and transconductance, and it shows a better accuracy than the given function or polynomial fitting method. Meanwhile, because the input capacitance has a strong nonlinear relationship with gate-source voltage and a weak nonlinear relationship with drain-source voltage, this paper uses Qc-Vgs curve instead of the Ciss-Vds curve in the proposed model to improve the accuracy. The parasitic inductance is also considered in the model. Then the switching processes are analyzed in detail, and they are described as a fifth-order nonlinear differential equation. Finally, the accuracy of the model is validated by experiment. The error of the predicted switching loss is within 20% when the load current changes from 3.5A to 20A.
AB - This paper proposes an improved switching loss model for a 650V enhancement-mode gallium nitride (GaN) transistor. The interpolation fitting method is used to fit the strong nonlinear capacitance and transconductance, and it shows a better accuracy than the given function or polynomial fitting method. Meanwhile, because the input capacitance has a strong nonlinear relationship with gate-source voltage and a weak nonlinear relationship with drain-source voltage, this paper uses Qc-Vgs curve instead of the Ciss-Vds curve in the proposed model to improve the accuracy. The parasitic inductance is also considered in the model. Then the switching processes are analyzed in detail, and they are described as a fifth-order nonlinear differential equation. Finally, the accuracy of the model is validated by experiment. The error of the predicted switching loss is within 20% when the load current changes from 3.5A to 20A.
KW - Gallium nitride (GaN)
KW - curve fitting
KW - model
KW - parasitic inductance
KW - switching loss
UR - https://www.scopus.com/pages/publications/85015347299
U2 - 10.1109/SPEC.2016.7846144
DO - 10.1109/SPEC.2016.7846144
M3 - 会议稿件
AN - SCOPUS:85015347299
T3 - 2016 IEEE 2nd Annual Southern Power Electronics Conference, SPEC 2016
BT - 2016 IEEE 2nd Annual Southern Power Electronics Conference, SPEC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2nd IEEE Annual Southern Power Electronics Conference, SPEC 2016
Y2 - 5 December 2016 through 8 December 2016
ER -