Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

P. I. Hsu; H. Gleskova; Z. Suo; S. Wagner; J. C. Sturm

Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

P. I. Hsu
, H. Gleskova
, Z. Suo
, S. Wagner
, J. C. Sturm

Princeton University

科研成果: 会议稿件 › 论文 › 同行评审

摘要

The fabrication of thin film transistors (TFT) on metal and plastic substrates and their subsequent plastic deformation was reported. The TFTs fabricated on patterned silicon nitride islands on polyimide substrates were shown to have reduced strain in the semiconductor islands. The devices retained their characteristics after the deformation as the carrier mobility and threshold voltage changed only nominally.

源语言	英语
页	193-194
页数	2
出版状态	已出版 - 2001
已对外发布	是
活动	Device Research Conference (DRC) - Notre Dame, IN, 美国期限: 25 6月 2001 → 27 6月 2001

会议

会议	Device Research Conference (DRC)
国家/地区	美国
市	Notre Dame, IN
时期	25/06/01 → 27/06/01

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引用此

@conference{ff3a964f910a4cd4a4ce029c2dc2c8de,

title = "Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes",

abstract = "The fabrication of thin film transistors (TFT) on metal and plastic substrates and their subsequent plastic deformation was reported. The TFTs fabricated on patterned silicon nitride islands on polyimide substrates were shown to have reduced strain in the semiconductor islands. The devices retained their characteristics after the deformation as the carrier mobility and threshold voltage changed only nominally.",

author = "Hsu, \{P. I.\} and H. Gleskova and Z. Suo and S. Wagner and Sturm, \{J. C.\}",

year = "2001",

language = "英语",

pages = "193--194",

note = "Device Research Conference (DRC) ; Conference date: 25-06-2001 Through 27-06-2001",

}

TY - CONF

T1 - Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

AU - Hsu, P. I.

AU - Gleskova, H.

AU - Suo, Z.

AU - Wagner, S.

AU - Sturm, J. C.

PY - 2001

Y1 - 2001

N2 - The fabrication of thin film transistors (TFT) on metal and plastic substrates and their subsequent plastic deformation was reported. The TFTs fabricated on patterned silicon nitride islands on polyimide substrates were shown to have reduced strain in the semiconductor islands. The devices retained their characteristics after the deformation as the carrier mobility and threshold voltage changed only nominally.

AB - The fabrication of thin film transistors (TFT) on metal and plastic substrates and their subsequent plastic deformation was reported. The TFTs fabricated on patterned silicon nitride islands on polyimide substrates were shown to have reduced strain in the semiconductor islands. The devices retained their characteristics after the deformation as the carrier mobility and threshold voltage changed only nominally.

UR - https://www.scopus.com/pages/publications/0034866850

M3 - 论文

AN - SCOPUS:0034866850

SP - 193

EP - 194

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

摘要

会议

其它文件与链接

学术指纹

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