摘要
The deformation behavior induced by Vickers indentation on (100) gallium arsenide single crystal has been investigated with high resolution electron microscopy. The results show that lots of microtwins, stacking-faults and heavy-distorted lattices were formed in indentation, and a crystalline-to-amorphous transition induced during indentation has been observed. It is possible that microtwins, stacking-faults and lattice-distortion is a middle process through which GaAs transforms from crystalline to amorphism.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | X-340 |
| 期刊 | Jinshu Xuebao/Acta Metallurgica Sinica |
| 卷 | 36 |
| 期 | 4 |
| 出版状态 | 已出版 - 4月 2000 |
| 已对外发布 | 是 |
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