Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

Jun Yin; Xiaofei Liu; Wanglin Lu; Jidong Li; Yuanzhi Cao; Yao Li; Ying Xu; Xuemei Li; Jun Zhou; Chuanhong Jin; Wanlin Guo

doi:10.1002/smll.201501439

Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

Jun Yin
, Xiaofei Liu
, Wanglin Lu
, Jidong Li
, Yuanzhi Cao
, Yao Li
, Ying Xu
, Xuemei Li
, Jun Zhou
, Chuanhong Jin
, Wanlin Guo

Nanjing University of Aeronautics and Astronautics
Zhejiang University
Huazhong University of Science and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

73 引用（Scopus）

摘要

A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN domains with opposite orientations are also systematically analyzed.

源语言	英语
页（从-至）	5375-5380
页数	6
期刊	Small
卷	11
期	40
DOI	https://doi.org/10.1002/smll.201501439
出版状态	已出版 - 1 10月 2015
已对外发布	是

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title = "Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium",

abstract = "A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN domains with opposite orientations are also systematically analyzed.",

keywords = "aligned growth, boron nitride, germanium, grain boundaries, hexagonal boron nitride, monolayers",

author = "Jun Yin and Xiaofei Liu and Wanglin Lu and Jidong Li and Yuanzhi Cao and Yao Li and Ying Xu and Xuemei Li and Jun Zhou and Chuanhong Jin and Wanlin Guo",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

month = oct,

day = "1",

doi = "10.1002/smll.201501439",

language = "英语",

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T1 - Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

AU - Yin, Jun

AU - Liu, Xiaofei

AU - Lu, Wanglin

AU - Li, Jidong

AU - Cao, Yuanzhi

AU - Li, Yao

AU - Xu, Ying

AU - Li, Xuemei

AU - Zhou, Jun

AU - Jin, Chuanhong

AU - Guo, Wanlin

PY - 2015/10/1

Y1 - 2015/10/1

N2 - A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN domains with opposite orientations are also systematically analyzed.

AB - A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN domains with opposite orientations are also systematically analyzed.

KW - aligned growth

KW - boron nitride

KW - germanium

KW - grain boundaries

KW - hexagonal boron nitride

KW - monolayers

UR - https://www.scopus.com/pages/publications/84945479653

U2 - 10.1002/smll.201501439

DO - 10.1002/smll.201501439

M3 - 文章

AN - SCOPUS:84945479653

SN - 1613-6810

VL - 11

SP - 5375

EP - 5380

JO - Small

JF - Small

IS - 40

ER -

Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

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