TY - JOUR
T1 - Ag/HfOx/Pt Unipolar Memristor for High-Efficiency Logic Operation
AU - Wang, Yuchen
AU - Zhou, Guangdong
AU - Sun, Bai
AU - Wang, Wenhua
AU - Li, Jie
AU - Duan, Shukai
AU - Song, Qunliang
N1 - Publisher Copyright:
© 2022 American Chemical Society.
PY - 2022/9/1
Y1 - 2022/9/1
N2 - Unipolar resistive switching (URS) behavior, known as the SET and RESET operating in a single voltage sweep direction, has shown great potential in the simplification of the peripheral circuit. The URS memristor always involves complicated interfacial engineering and structural design. In this work, a reliable URS behavior is realized using a simple Ag/HfOx/Pt memristor structure. The memristor displays a retention time of >104 s, an ON/OFF ratio of >103, and a good operation voltage. Synergy and competition between the Ag conductive filament formed by redox reaction and the migration of an oxygen vacancy are responsible for the observed URS. By comparison, a 35% power consumption is reduced during the logical operation from 0 to 1 to 0. The operation strategy is demonstrated by exhibiting the ACSII code of the capital letter denoted by eight logic states. This work provides a low-power concept for ultrahigh data storage using the URS memristor.
AB - Unipolar resistive switching (URS) behavior, known as the SET and RESET operating in a single voltage sweep direction, has shown great potential in the simplification of the peripheral circuit. The URS memristor always involves complicated interfacial engineering and structural design. In this work, a reliable URS behavior is realized using a simple Ag/HfOx/Pt memristor structure. The memristor displays a retention time of >104 s, an ON/OFF ratio of >103, and a good operation voltage. Synergy and competition between the Ag conductive filament formed by redox reaction and the migration of an oxygen vacancy are responsible for the observed URS. By comparison, a 35% power consumption is reduced during the logical operation from 0 to 1 to 0. The operation strategy is demonstrated by exhibiting the ACSII code of the capital letter denoted by eight logic states. This work provides a low-power concept for ultrahigh data storage using the URS memristor.
UR - https://www.scopus.com/pages/publications/85137135550
U2 - 10.1021/acs.jpclett.2c01906
DO - 10.1021/acs.jpclett.2c01906
M3 - 文章
C2 - 35993690
AN - SCOPUS:85137135550
SN - 1948-7185
VL - 13
SP - 8019
EP - 8025
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 34
ER -