@inproceedings{5ccfe8df8a4a49e8abf41153481fd84e,
title = "Active gate charge control strategy for series-connected IGBTs",
abstract = "Insulated gate bipolar transistors (IGBTs) are usually connected in series to satisfy the requirements of high-power and high-voltage in power electronics applications. However, due to the parameter deviations of the series-connected IGBTs, it is difficult to ensure an equal voltage sharing between them during both transient and steady-state operations. This paper proposed a novel active gate drive (AGD) which operates basing on the active gate charge control strategy. The proposed active gate drive was able to achieve both minimized switching loss and proper voltage sharing between the series-connected IGBTs. The performance of the proposed active gate drive and active gate control method have been validated by experimental results, and promising results have been obtained.",
keywords = "active gate drive, insulated gate bipolar transistors, series-connected",
author = "Fan Zhang and Xu Yang and Yu Ren and Ying Chen and Ruifeng Gou",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016 ; Conference date: 20-03-2016 Through 24-03-2016",
year = "2016",
month = may,
day = "10",
doi = "10.1109/APEC.2016.7468152",
language = "英语",
series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2071--2075",
booktitle = "2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016",
}