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Ab initio study of temperature-dependent piezoelectric and electronic properties of thermally stable GaPO4

  • Xiaoqing Yang
  • , Pan Guo
  • , Shunbo Hu
  • , Zhibin Gao
  • , Wenliang Yao
  • , Jinrong Cheng
  • , Samuel Poncé
  • , Baigeng Wang
  • , Wei Ren
  • Nanjing University
  • Shanghai University
  • Université catholique de Louvain
  • WEL Research Institute

科研成果: 期刊稿件文章同行评审

1 引用 (Scopus)

摘要

Gallium-phosphate (GaPO4) is one of the ultra-high thermally stable piezoelectric materials with a high critical temperature of 1206 K. Here, first principles calculations with quasi-harmonic approximation are performed to study thermal and other physical properties of α-GaPO4. For the electronic structure, we focus on the electron-phonon interaction and lattice expansion effects on the temperature-dependent band gap, which plays a significant role in zero-point renormalization. Significantly, the large piezoelectric constants e11 primarily comes from intrinsic sensitivity of Ga and O sites to axial strain, while P atoms contribute little, which remains true in other quartz-like type APO4 (A = B, Al, In). Our work provides an insight into the temperature-dependent electronic and piezoelectric properties of α-GaPO4 and motivates its applications in a high temperature environment.

源语言英语
页(从-至)21530-21537
页数8
期刊Physical Chemistry Chemical Physics
26
32
DOI
出版状态已出版 - 31 7月 2024

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