TY - JOUR
T1 - Ab initio modeling of Schottky-barrier height tuning by yttrium at nickel silicide/silicon interface
AU - Geng, Li
AU - Magyari-Kope, Blanka
AU - Zhang, Zhiyong
AU - Nishi, Yoshio
PY - 2008/7
Y1 - 2008/7
N2 - The mechanism of Schottky-barrier height (SBH) tuning by yttrium (Y) segregated at nickel silicide (NiSi2)/silicon interface is investigated based on first-principle calculations. SBH modification can be explained by a new chemical structure that forms when Y atoms substitute silicon atoms near the interface. Silicon dangling bonds are saturated, leading to a new pinning-free interfacial structure. When other layers of Y atoms are segregated in NiSi2, SBH for electrons can be reduced from 0.65 to 0.1 eV. The previously reported experimental phenomena can be explained by the calculations.
AB - The mechanism of Schottky-barrier height (SBH) tuning by yttrium (Y) segregated at nickel silicide (NiSi2)/silicon interface is investigated based on first-principle calculations. SBH modification can be explained by a new chemical structure that forms when Y atoms substitute silicon atoms near the interface. Silicon dangling bonds are saturated, leading to a new pinning-free interfacial structure. When other layers of Y atoms are segregated in NiSi2, SBH for electrons can be reduced from 0.65 to 0.1 eV. The previously reported experimental phenomena can be explained by the calculations.
KW - Nickel silicide (NiSi))
KW - Schottky barrier (SB) modulation
KW - Segregation
KW - Yttrium (Y)
UR - https://www.scopus.com/pages/publications/47249108176
U2 - 10.1109/LED.2008.2000647
DO - 10.1109/LED.2008.2000647
M3 - 文章
AN - SCOPUS:47249108176
SN - 0741-3106
VL - 29
SP - 746
EP - 749
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 7
ER -