TY - JOUR
T1 - A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications
AU - Zhang, Bing
AU - Hu, Congzhen
AU - Lai, Junhua
AU - Xin, Youze
AU - Guo, Zhuoqi
AU - Xue, Zhongming
AU - Dong, Li
AU - Wang, Chi
AU - Lei, Shuyu
AU - Zhang, Guohe
AU - Geng, Li
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2022/6/1
Y1 - 2022/6/1
N2 - A 320 × 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-μm two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m.
AB - A 320 × 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-μm two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m.
KW - Front-side illumination (FSI)
KW - indirect time-of-flight (i-ToF) image sensor
KW - low power consumption
KW - pinned layer doping
KW - potential buffer region (PBR)
KW - pump gate modulator (PGM)
UR - https://www.scopus.com/pages/publications/85118617121
U2 - 10.1109/TED.2021.3123045
DO - 10.1109/TED.2021.3123045
M3 - 文章
AN - SCOPUS:85118617121
SN - 0018-9383
VL - 69
SP - 2858
EP - 2864
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
ER -