A short review on research progress of ZnIn₂S₄-based S-scheme heterojunction: Improvement strategies

ZnIn₂S₄, a typical n-type semiconductor, has received intensive attention due to its suitable bandgap, excellent visible light absorption performance, and simple and flexible preparation methods. However, its application is curbed by photo-generated carrier recombination and photo corrosion. Although constructing S-scheme heterojunctions by combining ZnIn₂S₄ with other semiconductors can solve these problems, the photocatalytic activity of S-scheme heterojunctions can be further improved. Therefore, this short review summarizes modification strategies of ZnIn₂S₄-based S-scheme heterojunctions. This article also introduces the concept, design principles, and characterization methods of ZnIn₂S₄-based S-scheme heterojunction. Finally, current challenges and future research focuses related to ZnIn₂S₄-based S-scheme heterojunctions are discussed and summarized, including the utilization of advanced in-situ characterization techniques to further illuminate the photocatalytic mechanism, the DFT-assisted design of catalysts to increase the selectivity of products during photocatalytic CO₂ reduction, and extending the photo-response of ZnIn₂S₄-based S-scheme heterojunction to near-infrared range, etc.