A selective etching phenomenon on (001) faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid

Yun Wang; Haimin Zhang; Yanhe Han; Porun Liu; Xiangdong Yao; Huijun Zhao

doi:10.1039/c0cc04848h

A selective etching phenomenon on (001) faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid

Yun Wang
, Haimin Zhang
, Yanhe Han
, Porun Liu
, Xiangdong Yao
, Huijun Zhao

能源与动力工程学院

Griffith University Queensland

科研成果: 期刊稿件 › 文章 › 同行评审

130 引用（Scopus）

摘要

A selective etching phenomenon on (001) faceted anatase TiO₂ single crystal surfaces by HF and associated etching mechanism are reported. Density functional theory (DFT) calculations reveal that HF stabilizes the grown (001) facets at low concentrations, but selectively destroys the grown (001) facets at high concentrations.

源语言	英语
页（从-至）	2829-2831
页数	3
期刊	Chemical Communications
卷	47
期	10
DOI	https://doi.org/10.1039/c0cc04848h
出版状态	已出版 - 21 2月 2011

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10.1039/c0cc04848h

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title = "A selective etching phenomenon on (001) faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid",

abstract = "A selective etching phenomenon on (001) faceted anatase TiO2 single crystal surfaces by HF and associated etching mechanism are reported. Density functional theory (DFT) calculations reveal that HF stabilizes the grown (001) facets at low concentrations, but selectively destroys the grown (001) facets at high concentrations.",

author = "Yun Wang and Haimin Zhang and Yanhe Han and Porun Liu and Xiangdong Yao and Huijun Zhao",

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T1 - A selective etching phenomenon on (001) faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid

AU - Wang, Yun

AU - Zhang, Haimin

AU - Han, Yanhe

AU - Liu, Porun

AU - Yao, Xiangdong

AU - Zhao, Huijun

PY - 2011/2/21

Y1 - 2011/2/21

N2 - A selective etching phenomenon on (001) faceted anatase TiO2 single crystal surfaces by HF and associated etching mechanism are reported. Density functional theory (DFT) calculations reveal that HF stabilizes the grown (001) facets at low concentrations, but selectively destroys the grown (001) facets at high concentrations.

AB - A selective etching phenomenon on (001) faceted anatase TiO2 single crystal surfaces by HF and associated etching mechanism are reported. Density functional theory (DFT) calculations reveal that HF stabilizes the grown (001) facets at low concentrations, but selectively destroys the grown (001) facets at high concentrations.

UR - https://www.scopus.com/pages/publications/79951917696

U2 - 10.1039/c0cc04848h

DO - 10.1039/c0cc04848h

M3 - 文章

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SN - 1359-7345

VL - 47

SP - 2829

EP - 2831

JO - Chemical Communications

JF - Chemical Communications

IS - 10

ER -

A selective etching phenomenon on (001) faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid

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