摘要
Perovskite/silicon tandem technology has emerged as a promising strategy for low-cost and efficient solar energy utilization. However, the performance reduction of silicon bottom cells under low intensity illumination still prevents the tandem systems from yielding ultimate electric power. In this paper, we employed a V-shaped tandem configuration as well as a low parasitic absorption tungsten doped indium oxide (IWO) transparent electric anode, which exhibits only ∼0.6% parasitic absorption for near infrared wavelengths, to achieve a 100% enhancement of incident light intensity for the silicon sub-cell and boost the open-circuit voltage (VOC) of the silicon sub-cell to a value of 0.719 V. As a result, by using a 21.13% efficiency silicon solar cell, the tandem system achieves a cumulative efficiency of 25.57% (9.43% from the silicon cell). In addition, the V-shaped tandem system can maintain over 73% output power as the incident angle varies within ±25°.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 26479-26489 |
| 页数 | 11 |
| 期刊 | Journal of Materials Chemistry A |
| 卷 | 7 |
| 期 | 46 |
| DOI | |
| 出版状态 | 已出版 - 2019 |
联合国可持续发展目标
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可持续发展目标 7 经济适用的清洁能源
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