A novel and simple growth route towards ultra-fine ZnO nanowires

Zheng Chen; Zhiwei Shan; Shouxin Li; C. B. Liang; Scott X. Mao

doi:10.1016/j.jcrysgro.2004.02.017

A novel and simple growth route towards ultra-fine ZnO nanowires

Zheng Chen
, Zhiwei Shan
, Shouxin Li
, C. B. Liang
, Scott X. Mao

University of Pittsburgh
Jiangsu University of Science and Technology
CAS - Institute of Metal Research

科研成果: 期刊稿件 › 文章 › 同行评审

37 引用（Scopus）

摘要

Ultra-fine ZnO nanowires can be easily synthesized at 800°C in air via oxidation of Zn nanowires which is produced by heating ZnO+C mixture at 1100°C under a flow of nitrogen gas. Field-emission scanning electron microscope and transmission electron microscope investigations show that the ultra-fine ZnO nanowires grown out from Zn nanowires are high-quality single nanocrystals. The diameter of the ultra-fine ZnO nanowires ranges from 8 to 20nm and their length is 400nm - 1μm, having a high aspect ratio of ∼50. The growth mechanism of the ultra-fine ZnO nanowires is discussed.

源语言	英语
页（从-至）	482-486
页数	5
期刊	Journal of Crystal Growth
卷	265
期	3-4
DOI	https://doi.org/10.1016/j.jcrysgro.2004.02.017
出版状态	已出版 - 1 5月 2004
已对外发布	是

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abstract = "Ultra-fine ZnO nanowires can be easily synthesized at 800°C in air via oxidation of Zn nanowires which is produced by heating ZnO+C mixture at 1100°C under a flow of nitrogen gas. Field-emission scanning electron microscope and transmission electron microscope investigations show that the ultra-fine ZnO nanowires grown out from Zn nanowires are high-quality single nanocrystals. The diameter of the ultra-fine ZnO nanowires ranges from 8 to 20nm and their length is 400nm - 1μm, having a high aspect ratio of ∼50. The growth mechanism of the ultra-fine ZnO nanowires is discussed.",

keywords = "A1. Nanostructures, A2. Growth from vapor, A2. Single crystal growth, B2. Semiconducting materials",

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T1 - A novel and simple growth route towards ultra-fine ZnO nanowires

AU - Chen, Zheng

AU - Shan, Zhiwei

AU - Li, Shouxin

AU - Liang, C. B.

AU - Mao, Scott X.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - Ultra-fine ZnO nanowires can be easily synthesized at 800°C in air via oxidation of Zn nanowires which is produced by heating ZnO+C mixture at 1100°C under a flow of nitrogen gas. Field-emission scanning electron microscope and transmission electron microscope investigations show that the ultra-fine ZnO nanowires grown out from Zn nanowires are high-quality single nanocrystals. The diameter of the ultra-fine ZnO nanowires ranges from 8 to 20nm and their length is 400nm - 1μm, having a high aspect ratio of ∼50. The growth mechanism of the ultra-fine ZnO nanowires is discussed.

AB - Ultra-fine ZnO nanowires can be easily synthesized at 800°C in air via oxidation of Zn nanowires which is produced by heating ZnO+C mixture at 1100°C under a flow of nitrogen gas. Field-emission scanning electron microscope and transmission electron microscope investigations show that the ultra-fine ZnO nanowires grown out from Zn nanowires are high-quality single nanocrystals. The diameter of the ultra-fine ZnO nanowires ranges from 8 to 20nm and their length is 400nm - 1μm, having a high aspect ratio of ∼50. The growth mechanism of the ultra-fine ZnO nanowires is discussed.

KW - A1. Nanostructures

KW - A2. Growth from vapor

KW - A2. Single crystal growth

KW - B2. Semiconducting materials

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EP - 486

JO - Journal of Crystal Growth

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ER -

A novel and simple growth route towards ultra-fine ZnO nanowires

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