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A Near-Zero-Power Temperature Sensor with ±0.24 °c Inaccuracy Using only Standard CMOS Transistors for IoT Applications

  • Xi'an Jiaotong University

科研成果: 书/报告/会议事项章节会议稿件同行评审

11 引用 (Scopus)

摘要

We propose a near-zero-power temperature sensor only by using standard CMOS transistors without any resistor and special device or process. A pair of temperature sensing elements by employing the normal CMOS transistors is adopted to generate the proportional-to-absolute temperature (PTAT) and constant with temperature (CWT) sensing voltages. Then the two sensing voltages are converted to two reference current sources by using the proposed ultra-low-power voltage-to-current (VI) converter. The VI converter converts the linear voltage signal to an exponential current source with a constant exponent coefficient by using CMOS transistors instead of the conventional resistors. As a result, both power loss and chip area are saved. The whole temperature sensor is designed in standard 0.18 pm CMOS process with active area of only 0.017 mm2. The supply voltage is 600 mV. After 1-point calibration, an accuracy of ±0.24 °C is achieved across the temperature range of 0 °C - 80 °C. The power consumption is only 22 pW for the sensing element, 25 pW for VI converter and 80 pW for total at room temperature (27 °C). The good performance and ultra-small facility of the temperature sensor shows its good practicality for Internet-of-Thing (IoT) applications.

源语言英语
主期刊名2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781538648810
DOI
出版状态已出版 - 26 4月 2018
活动2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, 意大利
期限: 27 5月 201830 5月 2018

出版系列

姓名Proceedings - IEEE International Symposium on Circuits and Systems
2018-May
ISSN(印刷版)0271-4310

会议

会议2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
国家/地区意大利
Florence
时期27/05/1830/05/18

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