TY - GEN
T1 - A High-g triaxial piezoresistive accelerometer with sensing beams in pure axial deformation
AU - Yu, Mingzhi
AU - Zhao, Libo
AU - Jia, Chen
AU - Wang, Hongyan
AU - Zhao, Yulong
AU - Jiang, Zhuangde
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/4
Y1 - 2019/4
N2 - We put forward a novel structure of three-Axis high-g piezoresisitive accelerometer with pure axial deformation sensitive beams, which greatly improves the performance of accelerometer. The accelerometer's measurement range is 100,000 g. The advantages of novel structure are as follows. Firstly, the separation of sensor support structure and sensitive structure greatly weakens the coupling relationship between natural frequency and sensitivity. Secondly, the sensitive beam is always in a purely axially deformed state, to make full use of the deformation energy of sensitive beam, that greatly improves the measuring sensitivity of accelerometer. Then we simulated the main performance parameters of proposed accelerometer and optimized the structural parameters of novel structure. The measuring sensitivity of proposed accelerometer is simulated with the value of 1.2 μV/g/3V, and its resonant frequency is greater than 1 MHz. Finally, the fabrication process is designed for the accelerometer chip.
AB - We put forward a novel structure of three-Axis high-g piezoresisitive accelerometer with pure axial deformation sensitive beams, which greatly improves the performance of accelerometer. The accelerometer's measurement range is 100,000 g. The advantages of novel structure are as follows. Firstly, the separation of sensor support structure and sensitive structure greatly weakens the coupling relationship between natural frequency and sensitivity. Secondly, the sensitive beam is always in a purely axially deformed state, to make full use of the deformation energy of sensitive beam, that greatly improves the measuring sensitivity of accelerometer. Then we simulated the main performance parameters of proposed accelerometer and optimized the structural parameters of novel structure. The measuring sensitivity of proposed accelerometer is simulated with the value of 1.2 μV/g/3V, and its resonant frequency is greater than 1 MHz. Finally, the fabrication process is designed for the accelerometer chip.
KW - High-g
KW - Triaxial acceleration
KW - piezoresistive
KW - pure axially deformation
UR - https://www.scopus.com/pages/publications/85076702185
U2 - 10.1109/NEMS.2019.8915619
DO - 10.1109/NEMS.2019.8915619
M3 - 会议稿件
AN - SCOPUS:85076702185
T3 - Proceedings of the 14th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2019
SP - 176
EP - 180
BT - Proceedings of the 14th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 14th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2019
Y2 - 11 April 2019 through 14 April 2019
ER -