TY - GEN
T1 - A crater shape nano-crack for surface conduction electron emitters
AU - Chen, Bangdao
AU - Liu, Hongzhong
AU - Liu, Weihua
AU - Li, Xin
AU - Ding, Yucheng
AU - Lu, Bingheng
PY - 2012
Y1 - 2012
N2 - Thermal stress in multilayer thin films during a heating or freezing process can be employed to form different morphologies: wrinkles, buckles, and cracks. In this paper, a simple process based on above method is explored to induce nano-crack, which could be used as an excellent electron tunneling channel for surface conduction electron-emitter (SCE). The crack position is uplift by the buckling and delaminating process, and the crack size is controlled by the freezing temperature. Compared with the conventional two-dimensional SCE, the crater shape SCE constrained the electron trajectory, which led higher emission current and lower turn-on voltage.
AB - Thermal stress in multilayer thin films during a heating or freezing process can be employed to form different morphologies: wrinkles, buckles, and cracks. In this paper, a simple process based on above method is explored to induce nano-crack, which could be used as an excellent electron tunneling channel for surface conduction electron-emitter (SCE). The crack position is uplift by the buckling and delaminating process, and the crack size is controlled by the freezing temperature. Compared with the conventional two-dimensional SCE, the crater shape SCE constrained the electron trajectory, which led higher emission current and lower turn-on voltage.
KW - Crater Shape
KW - Nano-crack
KW - Surface Conduction Electron Emitters
UR - https://www.scopus.com/pages/publications/84869043217
U2 - 10.1109/IVNC.2012.6316903
DO - 10.1109/IVNC.2012.6316903
M3 - 会议稿件
AN - SCOPUS:84869043217
SN - 9781467319812
T3 - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
SP - 200
EP - 202
BT - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om
T2 - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
Y2 - 9 July 2012 through 13 July 2012
ER -