@inproceedings{878ebe2c73ca407c9707197605ff7a54,
title = "A compact subthreshold swing model of ultra-Thin body ultra-Thin box SOI MOSFETs with Gaussian doping profile",
abstract = "A two-dimensional (2D) physics-based compact subthreshold swing model is proposed for the ultra-Thin body ultra-Thin box SOI MOSFETs with a vertical Gaussian doping profile. Based on the channel potential which is influenced by the non-uniform doping profile, the subthreshold swing model is derived by using the concept of effective conduction path effect (ECPE). The outputs of the model show good agreement with numerical simulation results using Synopsys Technology Computer-Aided Design (TCAD). The model provides helpful physical insight for the nanoscale ultra-Thin body ultra-Thin box SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime.",
keywords = "Charge centroid, Gaussian doping, Silicon-on-insulator (SOI), Subthreshold swing",
author = "Sufen Wei and Guohe Zhang and Jing Liu and Huixiang Huang and Li Geng and Zhibiao Shao and Yang, \{Cheng Fu\}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Conference on Applied System Innovation, ICASI 2017 ; Conference date: 13-05-2017 Through 17-05-2017",
year = "2017",
month = jul,
day = "21",
doi = "10.1109/ICASI.2017.7988136",
language = "英语",
series = "Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1293--1296",
editor = "Teen-Hang Meen and Lam, \{Artde Donald Kin-Tak\} and Prior, \{Stephen D.\}",
booktitle = "Proceedings of the 2017 IEEE International Conference on Applied System Innovation",
}