A Compact Model for Si/SiC IGBT Implemented in LTspice

Md Maksudul Hossain; Arman Ur Rashid; Yuqi Wei; H. Alan Mantooth

doi:10.1109/WiPDAAsia51810.2021.9656030

A Compact Model for Si/SiC IGBT Implemented in LTspice

Md Maksudul Hossain
, Arman Ur Rashid
, Yuqi Wei
, H. Alan Mantooth

University of Arkansas, Fayetteville

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

1 引用（Scopus）

摘要

A well-established unified physically-based compact model for IGBT has been implemented in LTspice, a notable free SPICE circuit simulator. A 12.5 kV n-channel SiC IGBT, a p-channel (13 kV) SiC IGBT, and a 1200 V/60 A field stop Si IGBT from IXYS have been used in this paper for model verification. The parameters have been extracted with ICCAP software using LTspice as an external simulator. This model combines both Si and SiC materials for n and p-channel IGBT that add to the flexibility of a circuit designer. This paper shows an LTspice implementation of a model published in [3]. It describes the MOSFET channel, internal bipolar transistor, and nonlinear capacitances to a high degree of accuracy. It also has temperature scaling capabilities, as well as a reliable yet straightforward datasheet-driven parameter extraction mechanism.

源语言	英语
主期刊名	IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
出版商	Institute of Electrical and Electronics Engineers Inc.
页	313-317
页数	5
ISBN（电子版）	9781665418515
DOI	https://doi.org/10.1109/WiPDAAsia51810.2021.9656030
出版状态	已出版 - 2021
已对外发布	是
活动	2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 - Wuhan, 中国期限: 25 8月 2021 → 27 8月 2021

出版系列

姓名	IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

会议

会议	2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
国家/地区	中国
市	Wuhan
时期	25/08/21 → 27/08/21

访问文件

10.1109/WiPDAAsia51810.2021.9656030

其它文件与链接

链接到 Scopus 的出版物

引用此

Hossain, M. M., Ur Rashid, A., Wei, Y., & Mantooth, H. A. (2021). A Compact Model for Si/SiC IGBT Implemented in LTspice. 在 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 (页码 313-317). (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia51810.2021.9656030

@inproceedings{9be2dcea380d4b7398265fce24f7959f,

title = "A Compact Model for Si/SiC IGBT Implemented in LTspice",

abstract = "A well-established unified physically-based compact model for IGBT has been implemented in LTspice, a notable free SPICE circuit simulator. A 12.5 kV n-channel SiC IGBT, a p-channel (13 kV) SiC IGBT, and a 1200 V/60 A field stop Si IGBT from IXYS have been used in this paper for model verification. The parameters have been extracted with ICCAP software using LTspice as an external simulator. This model combines both Si and SiC materials for n and p-channel IGBT that add to the flexibility of a circuit designer. This paper shows an LTspice implementation of a model published in [3]. It describes the MOSFET channel, internal bipolar transistor, and nonlinear capacitances to a high degree of accuracy. It also has temperature scaling capabilities, as well as a reliable yet straightforward datasheet-driven parameter extraction mechanism.",

keywords = "IGBT, LTspice, SiC, Simulator, compact model",

author = "Hossain, \{Md Maksudul\} and \{Ur Rashid\}, Arman and Yuqi Wei and Mantooth, \{H. Alan\}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 ; Conference date: 25-08-2021 Through 27-08-2021",

year = "2021",

doi = "10.1109/WiPDAAsia51810.2021.9656030",

language = "英语",

series = "IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "313--317",

booktitle = "IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021",

}

Hossain, MM, Ur Rashid, A, Wei, Y & Mantooth, HA 2021, A Compact Model for Si/SiC IGBT Implemented in LTspice. 在 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021, Institute of Electrical and Electronics Engineers Inc., 页码 313-317, 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021, Wuhan, 中国, 25/08/21. https://doi.org/10.1109/WiPDAAsia51810.2021.9656030

A Compact Model for Si/SiC IGBT Implemented in LTspice. / Hossain, Md Maksudul; Ur Rashid, Arman; Wei, Yuqi 等.
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 页码 313-317 (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - A Compact Model for Si/SiC IGBT Implemented in LTspice

AU - Hossain, Md Maksudul

AU - Ur Rashid, Arman

AU - Wei, Yuqi

AU - Mantooth, H. Alan

PY - 2021

Y1 - 2021

N2 - A well-established unified physically-based compact model for IGBT has been implemented in LTspice, a notable free SPICE circuit simulator. A 12.5 kV n-channel SiC IGBT, a p-channel (13 kV) SiC IGBT, and a 1200 V/60 A field stop Si IGBT from IXYS have been used in this paper for model verification. The parameters have been extracted with ICCAP software using LTspice as an external simulator. This model combines both Si and SiC materials for n and p-channel IGBT that add to the flexibility of a circuit designer. This paper shows an LTspice implementation of a model published in [3]. It describes the MOSFET channel, internal bipolar transistor, and nonlinear capacitances to a high degree of accuracy. It also has temperature scaling capabilities, as well as a reliable yet straightforward datasheet-driven parameter extraction mechanism.

AB - A well-established unified physically-based compact model for IGBT has been implemented in LTspice, a notable free SPICE circuit simulator. A 12.5 kV n-channel SiC IGBT, a p-channel (13 kV) SiC IGBT, and a 1200 V/60 A field stop Si IGBT from IXYS have been used in this paper for model verification. The parameters have been extracted with ICCAP software using LTspice as an external simulator. This model combines both Si and SiC materials for n and p-channel IGBT that add to the flexibility of a circuit designer. This paper shows an LTspice implementation of a model published in [3]. It describes the MOSFET channel, internal bipolar transistor, and nonlinear capacitances to a high degree of accuracy. It also has temperature scaling capabilities, as well as a reliable yet straightforward datasheet-driven parameter extraction mechanism.

KW - IGBT

KW - LTspice

KW - SiC

KW - Simulator

KW - compact model

UR - https://www.scopus.com/pages/publications/85124806800

U2 - 10.1109/WiPDAAsia51810.2021.9656030

DO - 10.1109/WiPDAAsia51810.2021.9656030

M3 - 会议稿件

AN - SCOPUS:85124806800

T3 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

SP - 313

EP - 317

BT - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

Y2 - 25 August 2021 through 27 August 2021

ER -

Hossain MM, Ur Rashid A, Wei Y, Mantooth HA. A Compact Model for Si/SiC IGBT Implemented in LTspice. 在 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 页码 313-317. (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021). doi: 10.1109/WiPDAAsia51810.2021.9656030

A Compact Model for Si/SiC IGBT Implemented in LTspice

摘要

出版系列

会议

访问文件

其它文件与链接

学术指纹

引用此