A chemical link between Ge-Sb-Te and In-Sb-Te phase-change materials

Volker L. Deringer; Wei Zhang; Pascal Rausch; Riccardo Mazzarello; Richard Dronskowski; Matthias Wuttig

doi:10.1039/c5tc02314a

A chemical link between Ge-Sb-Te and In-Sb-Te phase-change materials

Volker L. Deringer
, Wei Zhang
, Pascal Rausch
, Riccardo Mazzarello
, Richard Dronskowski
, Matthias Wuttig

材料科学与工程学院

RWTH Aachen University

科研成果: 期刊稿件 › 文章 › 同行评审

54 引用（Scopus）

摘要

We identify a similar feature in the chemical-bonding nature of seemingly different phase-change materials (PCMs) for data storage. This affords new insight into the "next-generation" material In₃SbTe₂, establishes a hitherto missing link to the more ubiquitous Ge-Sb-Te alloys, and encourages the search for new PCMs beyond established electron-counting schemes.

源语言	英语
页（从-至）	9519-9523
页数	5
期刊	Journal of Materials Chemistry C
卷	3
期	37
DOI	https://doi.org/10.1039/c5tc02314a
出版状态	已出版 - 24 8月 2015

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abstract = "We identify a similar feature in the chemical-bonding nature of seemingly different phase-change materials (PCMs) for data storage. This affords new insight into the {"}next-generation{"} material In3SbTe2, establishes a hitherto missing link to the more ubiquitous Ge-Sb-Te alloys, and encourages the search for new PCMs beyond established electron-counting schemes.",

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AU - Deringer, Volker L.

AU - Zhang, Wei

AU - Rausch, Pascal

AU - Mazzarello, Riccardo

AU - Dronskowski, Richard

AU - Wuttig, Matthias

PY - 2015/8/24

Y1 - 2015/8/24

N2 - We identify a similar feature in the chemical-bonding nature of seemingly different phase-change materials (PCMs) for data storage. This affords new insight into the "next-generation" material In3SbTe2, establishes a hitherto missing link to the more ubiquitous Ge-Sb-Te alloys, and encourages the search for new PCMs beyond established electron-counting schemes.

AB - We identify a similar feature in the chemical-bonding nature of seemingly different phase-change materials (PCMs) for data storage. This affords new insight into the "next-generation" material In3SbTe2, establishes a hitherto missing link to the more ubiquitous Ge-Sb-Te alloys, and encourages the search for new PCMs beyond established electron-counting schemes.

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A chemical link between Ge-Sb-Te and In-Sb-Te phase-change materials

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