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A 85-Gb/s PAM-4 TIA With 2.2-mApp Maximum Linear Input Current in 28-nm CMOS

  • Shuaizhe Ma
  • , Zhenyu Yin
  • , Nianquan Ran
  • , Yifei Xia
  • , Ruixuan Yang
  • , Chuanhao Yu
  • , Songqin Xu
  • , Binhao Wang
  • , Nan Qi
  • , Bing Zhang
  • , Jingbo Shi
  • , Xiaoyan Gui
  • , Li Geng
  • , Dan Li
  • Xi'an Jiaotong University
  • CAS - Xi'an Institute of Optics and Precision Mechanics
  • CAS - Institute of Semiconductors
  • Beijing University of Posts and Telecommunications

科研成果: 期刊稿件文章同行评审

5 引用 (Scopus)

摘要

This letter presents a 100-Gb/s CMOS PAM-4 transimpedance amplifier (TIA) with multimilliampere maximum linear input current. A low-noise high-linearity TIA architecture is proposed, leveraging the reconfigurable front-end (FE) TIA and the continuous time linear equalizer (CTLE) synced at multiple gain modes. Implemented in a 28-nm CMOS technology, the TIA achieves bandwidth of more than 24 GHz with transimpedance gain of 65 dB Ω, while showing an acrlong IRN current density of 10.4 pA/ √ Hz. The maximum linear input current reaches 2.2 mApp and the total harmonic distortion (THD) is less than 3% for an output swing of 600 mVpp, diff. The chip consumes power of 56 mW from 1.4 and 1.1-V supply.

源语言英语
页(从-至)50-53
页数4
期刊IEEE Solid-State Circuits Letters
7
DOI
出版状态已出版 - 2024

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