摘要
This letter presents a 100-Gb/s CMOS PAM-4 transimpedance amplifier (TIA) with multimilliampere maximum linear input current. A low-noise high-linearity TIA architecture is proposed, leveraging the reconfigurable front-end (FE) TIA and the continuous time linear equalizer (CTLE) synced at multiple gain modes. Implemented in a 28-nm CMOS technology, the TIA achieves bandwidth of more than 24 GHz with transimpedance gain of 65 dB Ω, while showing an acrlong IRN current density of 10.4 pA/ √ Hz. The maximum linear input current reaches 2.2 mApp and the total harmonic distortion (THD) is less than 3% for an output swing of 600 mVpp, diff. The chip consumes power of 56 mW from 1.4 and 1.1-V supply.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 50-53 |
| 页数 | 4 |
| 期刊 | IEEE Solid-State Circuits Letters |
| 卷 | 7 |
| DOI | |
| 出版状态 | 已出版 - 2024 |
学术指纹
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