TY - JOUR
T1 - A 40-nm Training-Inference STT-MRAM Near-Memory Computing Macro for Memory-Augmented Neural Network Acceleration
AU - Zhou, Shengchao
AU - Wang, Yifan
AU - Meng, Hongrui
AU - Wu, Yajun
AU - Ma, Zizhao
AU - Zou, Teng
AU - Min, Tai
AU - Wang, Shaohao
AU - Xie, Yufeng
N1 - Publisher Copyright:
© 1993-2012 IEEE.
PY - 2026
Y1 - 2026
N2 - Recently, memory-augmented neural networks (MANNs) have gained significant attention as a critical solution for few-shot learning (FSL). These networks leverage external memory to store prior knowledge, thereby enhancing classification efficiency. Spin-transfer torque magnetic random access memory (STT-MRAM) is particularly suited for this application due to its compact cell size, excellent data retention, and scalability. In this article, we introduce a STT-MRAM-based near-memory computing (NMC) macro specifically designed for MANNs. Our approach incorporates several key innovations aimed at overcoming challenges in hardware implementation while improving MANN performance as follows: 1) a parallel computing architecture within the NMC to expedite L1 distance computations; 2) a memory invert coding (MIC) and self-termination write (STW) scheme that reduce write operations and energy consumption, addressing the issues of frequent writes and high write currents during the training phase of MANNs; 3) a dynamic offset-compensation sense amplifier (DOC-SA) and high-throughput switch-capacitor (HTSC) readout scheme to improve read accuracy and throughput, tackling low read margins and limited readout bandwidth; 4) an exploration of MANN architectures validates the reusability of the NMC macro. The optimized matching-networks (MCHnets)-based structure achieves an accuracy exceeding 90% in five-way and eight-way Omniglot classification tasks. Fabricated with a 40-nm CMOS technology, our design achieves classification accuracies of 96.37% for eight-way-five-shot tasks and 93.72% for 16-way-five-shot tasks on the Omniglot dataset utilizing the optimized MCHnet, showcasing an impressive energy efficiency of 6.47 TOPS/W at the basis of 16-bit L1 distance computing in the classification tasks of MANN.
AB - Recently, memory-augmented neural networks (MANNs) have gained significant attention as a critical solution for few-shot learning (FSL). These networks leverage external memory to store prior knowledge, thereby enhancing classification efficiency. Spin-transfer torque magnetic random access memory (STT-MRAM) is particularly suited for this application due to its compact cell size, excellent data retention, and scalability. In this article, we introduce a STT-MRAM-based near-memory computing (NMC) macro specifically designed for MANNs. Our approach incorporates several key innovations aimed at overcoming challenges in hardware implementation while improving MANN performance as follows: 1) a parallel computing architecture within the NMC to expedite L1 distance computations; 2) a memory invert coding (MIC) and self-termination write (STW) scheme that reduce write operations and energy consumption, addressing the issues of frequent writes and high write currents during the training phase of MANNs; 3) a dynamic offset-compensation sense amplifier (DOC-SA) and high-throughput switch-capacitor (HTSC) readout scheme to improve read accuracy and throughput, tackling low read margins and limited readout bandwidth; 4) an exploration of MANN architectures validates the reusability of the NMC macro. The optimized matching-networks (MCHnets)-based structure achieves an accuracy exceeding 90% in five-way and eight-way Omniglot classification tasks. Fabricated with a 40-nm CMOS technology, our design achieves classification accuracies of 96.37% for eight-way-five-shot tasks and 93.72% for 16-way-five-shot tasks on the Omniglot dataset utilizing the optimized MCHnet, showcasing an impressive energy efficiency of 6.47 TOPS/W at the basis of 16-bit L1 distance computing in the classification tasks of MANN.
KW - Few-shot learning (FSL)
KW - memory-augmented neural network (MANN)
KW - near-memory computing (NMC)
KW - spin-transfer torque magnetic random access memory (STT-MRAM)
UR - https://www.scopus.com/pages/publications/105014479543
U2 - 10.1109/TVLSI.2025.3597404
DO - 10.1109/TVLSI.2025.3597404
M3 - 文章
AN - SCOPUS:105014479543
SN - 1063-8210
VL - 34
SP - 48
EP - 60
JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IS - 1
ER -