@inproceedings{759d5509e8ab4da9af66ce6574b649cb,
title = "A 200-Gb/s Low-Noise TIA in 28-nm CMOS",
abstract = "This paper presents a 200-Gb/s low-noise transimpedance amplifier (TIA) implemented in standard 28-nm CMOS technology, addressing the escalating bandwidth demands of artificial intelligence data centers (AIDCs). The proposed TIA employs a three-stage front-end with a inductive peaking strategy, a single-to-differential equalizer (S2D-EQ), and a linear CML output buffer for signal performance. The TIA achieves transimpedance gain of 61.6 dBΩ, an O-E bandwidth of 48 GHz, and an input-referred noise density of 11.5 pA/√Hz while consuming 116 mW (0.58 pJ/bit). The TIA supports 100-GBaud PAM-4 modulation, validating its suitability for nextgeneration high-density optical communication systems.",
keywords = "CMOS, inductive peaking, low noise, power efficiency, Trans-impedance Amplifier (TIA)",
author = "Feiyang Zhang and Jianyu Yang and Yifei Xia and Zhixing Zhang and Ruixuan Yang and Liang Zhao and Wenxin Zhang and Cailing Li and Zetong Zhang and Shenlei Bao and Binhao Wang and Li Geng and Dan Li",
note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 2026 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2026 ; Conference date: 07-06-2026 Through 09-06-2026",
year = "2026",
doi = "10.1109/RFIC70222.2026.11602369",
language = "英语",
series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "315--318",
booktitle = "2026 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2026",
}