A 128Kb HfO2 ReRAM with novel double-reference and dynamic-tracking scheme for write yield improvement

Chengying Chen; Hongbin Sun; Haihua Shen; Feng Zhang

doi:10.1587/elex.13.20160061

A 128Kb HfO₂ ReRAM with novel double-reference and dynamic-tracking scheme for write yield improvement

Chengying Chen
, Hongbin Sun
, Haihua Shen
, Feng Zhang

人工智能学院

CAS - Institute of Microelectronics
University of Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

A 128 Kb HfO₂ Resistive Random Access Memory (ReRAM) chip is developed based on HHNEC 0.13μm 1P8M CMOS process. Re-RAM is suffering the write yield problem due to the tail-bit issues and large resistance variations at high temperature. In this paper a novel Double-Reference and Dynamic-Tracking Write (DR-DTW) scheme and a Dynamic read scheme are proposed to fix these issues. The experiment results show that the tail-bit issues are almost eliminated and the write yield is improved greatly compared with traditional write scheme.

源语言	英语
文章编号	20160061
期刊	IEICE Electronics Express
卷	13
期	6
DOI	https://doi.org/10.1587/elex.13.20160061
出版状态	已出版 - 26 2月 2016

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10.1587/elex.13.20160061

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title = "A 128Kb HfO2 ReRAM with novel double-reference and dynamic-tracking scheme for write yield improvement",

abstract = "A 128 Kb HfO2 Resistive Random Access Memory (ReRAM) chip is developed based on HHNEC 0.13μm 1P8M CMOS process. Re-RAM is suffering the write yield problem due to the tail-bit issues and large resistance variations at high temperature. In this paper a novel Double-Reference and Dynamic-Tracking Write (DR-DTW) scheme and a Dynamic read scheme are proposed to fix these issues. The experiment results show that the tail-bit issues are almost eliminated and the write yield is improved greatly compared with traditional write scheme.",

keywords = "Double-reference, Dynamic read, Dynamic-tracking, ReRAM",

author = "Chengying Chen and Hongbin Sun and Haihua Shen and Feng Zhang",

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T1 - A 128Kb HfO2 ReRAM with novel double-reference and dynamic-tracking scheme for write yield improvement

AU - Chen, Chengying

AU - Sun, Hongbin

AU - Shen, Haihua

AU - Zhang, Feng

PY - 2016/2/26

Y1 - 2016/2/26

N2 - A 128 Kb HfO2 Resistive Random Access Memory (ReRAM) chip is developed based on HHNEC 0.13μm 1P8M CMOS process. Re-RAM is suffering the write yield problem due to the tail-bit issues and large resistance variations at high temperature. In this paper a novel Double-Reference and Dynamic-Tracking Write (DR-DTW) scheme and a Dynamic read scheme are proposed to fix these issues. The experiment results show that the tail-bit issues are almost eliminated and the write yield is improved greatly compared with traditional write scheme.

AB - A 128 Kb HfO2 Resistive Random Access Memory (ReRAM) chip is developed based on HHNEC 0.13μm 1P8M CMOS process. Re-RAM is suffering the write yield problem due to the tail-bit issues and large resistance variations at high temperature. In this paper a novel Double-Reference and Dynamic-Tracking Write (DR-DTW) scheme and a Dynamic read scheme are proposed to fix these issues. The experiment results show that the tail-bit issues are almost eliminated and the write yield is improved greatly compared with traditional write scheme.

KW - Double-reference

KW - Dynamic read

KW - Dynamic-tracking

KW - ReRAM

UR - https://www.scopus.com/pages/publications/84961732801

U2 - 10.1587/elex.13.20160061

DO - 10.1587/elex.13.20160061

M3 - 文章

AN - SCOPUS:84961732801

SN - 1349-2543

VL - 13

JO - IEICE Electronics Express

JF - IEICE Electronics Express

IS - 6

M1 - 20160061

ER -

A 128Kb HfO2 ReRAM with novel double-reference and dynamic-tracking scheme for write yield improvement

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A 128Kb HfO₂ ReRAM with novel double-reference and dynamic-tracking scheme for write yield improvement