摘要
The Innoslab design, already established for neodymium doped laser crystals, was applied to ytterbium doped laser materials. Recent progresses in brightness of high power diode lasers facilitate efficient pumping of quasi-three-level laser materials. Innoslab amplifiers are compared to competing thin-disk and fiber fs-amplifiers. A compact diode-pumped Yb:YAG Innoslab fs-oscillator-amplifier system, scalable to the kilowatt range, was realized. Numerical simulations result in conditions for high efficiency and beam quality. Nearly transform and diffraction limited 680 fs pulses at 400 W average output power and 76 MHz repetition rate without using CPA technology have been achieved at room temperature so far.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 12230-12245 |
| 页数 | 16 |
| 期刊 | Optics Express |
| 卷 | 17 |
| 期 | 15 |
| DOI | |
| 出版状态 | 已出版 - 20 7月 2009 |
| 已对外发布 | 是 |
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