TY - GEN
T1 - 3D simulation on electric field distribution of basin insulator in 110kV GIS under very fast transient overvoltage
AU - Cheng, Lin
AU - Jiang, Liuhao
AU - Zhao, Haihong
AU - Chen, Gonglai
AU - Zhao, Jiuhui
AU - Feng, Yang
AU - Li, Shengtao
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The basin insulator is the main insulating component of GIS. The problem of frequent GIS failures caused by the rapid deterioration of basin insulator performance has not been completely solved in the electrical industry. Very fast transient over-voltage (VFTO) may be an important factor for the rapid deterio-ration of the insulation performance of basin insulators. Based on the finite element method, this research simulates the three-dimensional electric field of isolating switch in GIS. The electric field distribution of the basin insulator at different positions inside the iso-lating switch under the action of VFTO is calculated. The results show that when a sinusoidal voltage of 110kV is input, the voltage amplitude at the lumped port 1 on the bus side can reach 190kV; the voltage in the arc region at lumped port 2 rapidly decreases to 0; the voltage at the load-side lumped port 3 exhibits an oscillation attenuation change with an amplitude of 10kV and decays to 0 at about 500ns. Besides, the electric field distribution on the surface of basin insulator under the action of VFTO shows a trend of first increasing and then decreasing along the radial direction from the inside to the outside. And the electric field strength reaches a max-imum at the intersection of the central area and the edge.
AB - The basin insulator is the main insulating component of GIS. The problem of frequent GIS failures caused by the rapid deterioration of basin insulator performance has not been completely solved in the electrical industry. Very fast transient over-voltage (VFTO) may be an important factor for the rapid deterio-ration of the insulation performance of basin insulators. Based on the finite element method, this research simulates the three-dimensional electric field of isolating switch in GIS. The electric field distribution of the basin insulator at different positions inside the iso-lating switch under the action of VFTO is calculated. The results show that when a sinusoidal voltage of 110kV is input, the voltage amplitude at the lumped port 1 on the bus side can reach 190kV; the voltage in the arc region at lumped port 2 rapidly decreases to 0; the voltage at the load-side lumped port 3 exhibits an oscillation attenuation change with an amplitude of 10kV and decays to 0 at about 500ns. Besides, the electric field distribution on the surface of basin insulator under the action of VFTO shows a trend of first increasing and then decreasing along the radial direction from the inside to the outside. And the electric field strength reaches a max-imum at the intersection of the central area and the edge.
UR - https://www.scopus.com/pages/publications/85143967863
U2 - 10.1109/ICHVE53725.2022.9961498
DO - 10.1109/ICHVE53725.2022.9961498
M3 - 会议稿件
AN - SCOPUS:85143967863
T3 - 2022 IEEE International Conference on High Voltage Engineering and Applications, ICHVE 2022
BT - 2022 IEEE International Conference on High Voltage Engineering and Applications, ICHVE 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Conference on High Voltage Engineering and Applications, ICHVE 2022
Y2 - 25 September 2022 through 29 September 2022
ER -