摘要
The structure and working principle of reversely switched dynistor(RSD) semiconductor closing switch are introduced. Design techniques of the high voltage RSD assembly are analyzed. A 12 kV RSD assembly and its trigger system have been designed and constructed, which can operate at 10~12 kV. Test results show the stable and reliable operation of this assembly. Under 12 kV, the peak amplitude of current could reach 133 kA, with 24 C charge transferred and current rising rate of 4.12 kA/μs, and the peak power switched could reach 1.6 GW.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 803-806 |
| 页数 | 4 |
| 期刊 | Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams |
| 卷 | 22 |
| 期 | 4 |
| DOI | |
| 出版状态 | 已出版 - 4月 2010 |
| 已对外发布 | 是 |
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