TY - GEN
T1 - 10kV SiC MOSFET Module for Traction Converter Application
AU - Cheng, Xu
AU - Chen, Jianfu
AU - Chen, Yong
AU - Wu, Hongyuan
AU - Zhang, Xiaotian
AU - Zhang, Fan
AU - Zhao, Cheng
AU - Zhu, Junjie
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - The use of silicon carbide (SiC) MOSFET power modules offers benefits such as rapid switching, excellent thermal conductivity, and minimal losses, supporting the advancement of energy-efficient, highly reliable high-power locomotive traction converters. In this paper, a 10 kV 125 A halfbridge high-voltage silicon carbide MOSFET power module for traction drive system is designed and its electrical properties are investigated. A test circuit has been built for a double-pulse simulation to evaluate the dynamic and static capabilities of the module. It has been tested in various physical simulations, such as electromagnetic, thermal, and mechanical analyses, confirming its suitability for use in traction converters and other high-voltage applications.
AB - The use of silicon carbide (SiC) MOSFET power modules offers benefits such as rapid switching, excellent thermal conductivity, and minimal losses, supporting the advancement of energy-efficient, highly reliable high-power locomotive traction converters. In this paper, a 10 kV 125 A halfbridge high-voltage silicon carbide MOSFET power module for traction drive system is designed and its electrical properties are investigated. A test circuit has been built for a double-pulse simulation to evaluate the dynamic and static capabilities of the module. It has been tested in various physical simulations, such as electromagnetic, thermal, and mechanical analyses, confirming its suitability for use in traction converters and other high-voltage applications.
KW - Multi-physical Field Simulation
KW - Silicon Carbide MOSFETs
KW - Traction Converters
UR - https://www.scopus.com/pages/publications/105003111442
U2 - 10.1109/DCTS62535.2024.10941527
DO - 10.1109/DCTS62535.2024.10941527
M3 - 会议稿件
AN - SCOPUS:105003111442
T3 - 2024 IEEE International Conference on DC Technologies and Systems, DCTS 2024
SP - 93
EP - 98
BT - 2024 IEEE International Conference on DC Technologies and Systems, DCTS 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE International Conference on DC Technologies and Systems, DCTS 2024
Y2 - 19 October 2024 through 20 October 2024
ER -