摘要
In order to lay a foundation for application of gas analysis method in diagnosing surface defect on the solid insulation,we constructed an experimental platform to study the decomposition characteristic of SF6 under surface defect. Besides, the calculation method of quantum chemistry was adopted to explore the formation path of several kinds of key products. Experimental results show that main characteristic products under surface defect on the solid insulator include two kinds of sulfur-containing products and four kinds of carbon-containing products: SOF2, SO2, CO, CO2, CF4, and CS2. Contents of CO2, CO, and CS2 grow rapidly from 0.46×10-6, 4.22×10-6, and 18.69×10-6 to 2.05×10-6, 14.76×10-6, and 27.77×10-6, respectively. Therefore, it can be assumed that their formation rates are important characteristic parameters for determining defect severity. Complex chemical reactions happen when surface discharges occur on the solid insulator. CF4 is mainly derived from the reactions between carbureted hydrogen, F, and HF. CO is derived from oxidative dehydrogenation of carbureted hydrogen. CO2 is generated through various ways including oxidation of fluorocarbon, oxidative decomposition of CO, and oxidative dehydrogenation of carbureted hydrogen. CS2 is generated be the reaction between CHx and S2 or CHx and H2S. The fault cases prove the practical value of the research results in actual production.
| 投稿的翻译标题 | Decomposition Characteristics and Mechanism of SF6 Under Surface Defect on Solid Insulator |
|---|---|
| 源语言 | 繁体中文 |
| 页(从-至) | 2977-2987 |
| 页数 | 11 |
| 期刊 | Gaodianya Jishu/High Voltage Engineering |
| 卷 | 44 |
| 期 | 9 |
| DOI | |
| 出版状态 | 已出版 - 30 9月 2018 |
关键词
- Characteristic products
- Decomposition characteristics
- Decomposition mechanism
- Formation path
- Surface defect
学术指纹
探究 '固体绝缘沿面缺陷下的SF6分解特性及机理' 的科研主题。它们共同构成独一无二的指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver